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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 4,388
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
10,421
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8VSON
|
- | - | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-VDFN Exposed Pad | 8-VSON (4x4) | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 7.2ns，5.5ns | 1.3V，2.7V | 4A，4A | ||
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Renesas Electronics America Inc. |
9,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
Tape & Reel (TR) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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|
|
Renesas Electronics America Inc. |
9,825
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
Cut Tape (CT) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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|
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Renesas Electronics America Inc. |
9,825
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
- | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
Tape & Reel (TR) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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|
|
Renesas Electronics America Inc. |
3,101
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
Cut Tape (CT) | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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|
|
Renesas Electronics America Inc. |
3,101
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL 80V 20-SOIC
|
- | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Surface Mount | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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Maxim Integrated |
1,238
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC DVR MOSFET DUAL NON-INV 8SOIC
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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IXYS Integrated Circuits Division |
8,138
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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|
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IXYS Integrated Circuits Division |
3,785
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A NON-INV 8-SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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IXYS Integrated Circuits Division |
4,679
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL NONINV 8SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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|
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IXYS Integrated Circuits Division |
3,463
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 4A DUAL ENABLE 8SOIC
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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Infineon Technologies |
8,446
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14DIP
|
Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Through Hole | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Texas Instruments |
44,750
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC GATE DRVR HALF BRDG 5A 12SMD
|
Tape & Reel (TR) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 12-WFBGA，DSBGA | 12-DSBGA | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 107V | 7ns，1.5ns | 1.76V，1.89V | 1.2A，5A | ||
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|
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Texas Instruments |
45,363
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRDG 5A 12SMD
|
Cut Tape (CT) | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 12-WFBGA，DSBGA | 12-DSBGA | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 107V | 7ns，1.5ns | 1.76V，1.89V | 1.2A，5A | ||
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|
|
Texas Instruments |
45,363
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR HALF BRDG 5A 12SMD
|
- | - | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 12-WFBGA，DSBGA | 12-DSBGA | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 107V | 7ns，1.5ns | 1.76V，1.89V | 1.2A，5A | ||
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|
|
Infineon Technologies |
2,891
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Tube | - | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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|
|
Renesas Electronics America Inc. |
27,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC PIN DRIVER 3STATE 8-SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
|
|
|
Renesas Electronics America Inc. |
27,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PIN DRIVER 3STATE 8-SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
|
|
|
Renesas Electronics America Inc. |
27,296
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PIN DRIVER 3STATE 8-SOIC
|
- | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A |
