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- Packaging：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 4,388
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
22,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
Tape & Reel (TR) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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Infineon Technologies |
23,326
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
Cut Tape (CT) | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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|
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Infineon Technologies |
23,326
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER CURR SENSE 1CHAN 8SOIC
|
- | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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Texas Instruments |
13,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
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IC DVR HALF-BRIDGE HV 10-MSOP
|
Tape & Reel (TR) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
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Texas Instruments |
14,911
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF-BRIDGE HV 10-MSOP
|
Cut Tape (CT) | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
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Texas Instruments |
14,911
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DVR HALF-BRIDGE HV 10-MSOP
|
- | - | 9 V ~ 14 V | -40°C ~ 125°C (TJ) | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Surface Mount | Independent | Half-Bridge | 2 | N-Channel MOSFET | 118V | 600ns，600ns | 0.8V，2.2V | 1.6A，1.6A | ||
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Texas Instruments |
9,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
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HIGH SIDE PROTECTION CONTROL
|
Tape & Reel (TR) | - | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Surface Mount | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | 24μA，2.2mA | ||
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|
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Texas Instruments |
11,073
|
3 jours |
-
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MOQ: 1 MPQ: 1
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HIGH SIDE PROTECTION CONTROL
|
Cut Tape (CT) | - | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Surface Mount | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | 24μA，2.2mA | ||
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|
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Texas Instruments |
11,073
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
HIGH SIDE PROTECTION CONTROL
|
- | - | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Surface Mount | Single | High-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | 24μA，2.2mA | ||
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ON Semiconductor |
2,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
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Tape & Reel (TR) | Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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ON Semiconductor |
4,990
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
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Cut Tape (CT) | Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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ON Semiconductor |
4,990
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
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- | Automotive，AEC-Q100 | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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Infineon Technologies |
20,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MFET DRVR HIGH SIDE 8SOIC
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Tape & Reel (TR) | - | 6 V ~ 36 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side | 1 | N-Channel MOSFET | - | 1μs，1μs | 0.9V，2.7V | - | ||
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Infineon Technologies |
20,745
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MFET DRVR HIGH SIDE 8SOIC
|
Cut Tape (CT) | - | 6 V ~ 36 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side | 1 | N-Channel MOSFET | - | 1μs，1μs | 0.9V，2.7V | - | ||
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Infineon Technologies |
20,745
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MFET DRVR HIGH SIDE 8SOIC
|
- | - | 6 V ~ 36 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Single | High-Side | 1 | N-Channel MOSFET | - | 1μs，1μs | 0.9V，2.7V | - | ||
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|
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Analog Devices Inc. |
7,500
|
3 jours |
-
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MOQ: 2500 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
Tape & Reel (TR) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
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|
|
Analog Devices Inc. |
9,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
Cut Tape (CT) | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
|
|
Analog Devices Inc. |
9,980
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR DUAL NONINVERT 4A 8SOIC
|
- | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Surface Mount | Independent | Low-Side | 2 | N-Channel MOSFET | - | 10ns，10ns | 0.8V，2V | 4A，4A | ||
|
|
|
Infineon Technologies |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Tape & Reel (TR) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
7,227
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8SOIC
|
Cut Tape (CT) | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Surface Mount | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA |
