- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 782
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
61
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRVR MOSFET QUAD 18-DIP
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Tube | - | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | - | ||
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Infineon Technologies |
95
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 600V 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.7V，2.3V | 290mA，600mA | ||
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|
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Texas Instruments |
629
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL HIGH SPD FET DRVR 8-DIP
|
Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
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|
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Infineon Technologies |
191
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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|
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Infineon Technologies |
132
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
92
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Maxim Integrated |
76
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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Maxim Integrated |
31
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRVR MOSFET DUAL 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Maxim Integrated |
100
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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Tamura |
36
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC N-CH GATE DRIVER
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Tray | - | 15 V ~ 24 V | -30°C ~ 85°C (TA) | 34-DIP Module，31 Leads | 502 | - | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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Tamura |
25
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC IBGT GATE DRIVER
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Tray | - | 15 V ~ 24 V | -30°C ~ 85°C (TA) | 34-DIP Module，31 Leads | 502 | - | Independent | Half-Bridge | 2 | IGBT | - | - | 0.8V，2V | - | ||
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Tamura |
19
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC IBGT GATE DRIVER
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Tray | - | 15 V ~ 24 V | -30°C ~ 85°C (TA) | 34-DIP Module，31 Leads | 502 | - | Independent | Half-Bridge | 2 | IGBT | - | - | 0.8V，2V | - | ||
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Tamura |
17
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC N-CH GATE DRIVER
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Tray | - | 15 V ~ 24 V | -30°C ~ 85°C (TA) | 34-DIP Module，31 Leads | 502 | - | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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STMicroelectronics |
843
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE HV 8-DIP
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Tube | - | 17V (Max) | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，40ns | 1.1V，1.8V | 400mA，650mA | ||
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Infineon Technologies |
362
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 600V 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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|
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Infineon Technologies |
799
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 200V 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Texas Instruments |
273
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL HS PWR FET DRVR 8-DIP
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Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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|
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Texas Instruments |
228
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR DUAL HS 4A 8-DIP
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Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
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Texas Instruments |
228
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL HS PWR FET DRVR 8-DIP
|
Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
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Texas Instruments |
222
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR DUAL HS 4A 8-DIP
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Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A |
