- Voltage - Supply：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 19
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
4,512
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DUAL HIGH SPD FET DRVR 8-DIP
|
Tube | 4 V ~ 14 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
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|
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Texas Instruments |
3,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL 2A MOSFET DRIVER 8-DIP
|
Tube | 4 V ~ 14 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
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|
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Texas Instruments |
217
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC DUAL 2A COMP FET DRIVER 8-DIP
|
Tube | 4 V ~ 14 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
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|
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Texas Instruments |
629
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HIGH SPD FET DRVR 8-DIP
|
Tube | 4 V ~ 14 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
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|
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Texas Instruments |
241
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL HIGH SPD FET DRVR 8-DIP
|
Tube | 4 V ~ 14 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
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|
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 350 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-DIP
|
Tube | 4 V ~ 14 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 350 MPQ: 1
|
IC DUAL HS MOSFET DRVR 8-DIP
|
Tube | 4 V ~ 14 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 250 MPQ: 1
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IC DUAL HS MOSFET DRVR 8-DIP
|
Tube | 4 V ~ 14 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
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Microchip Technology |
206
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 6A 8DIP
|
Tube | 4.5 V ~ 18 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 6A，6A | |||
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Microchip Technology |
300
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 6A TO220-5
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Tube | 4.5 V ~ 18 V | TO-220-5 | TO-220-5 | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 6A，6A | |||
|
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Microchip Technology |
43
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL 8-DIP
|
Tube | 4.5 V ~ 16 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 600 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8DIP
|
Tube | 4.5 V ~ 18 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，30ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 1020 MPQ: 1
|
IC MOSFET DVR 1.2A DUAL HS 8DIP
|
Tube | 4.5 V ~ 16 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
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|
IXYS |
Enquête
|
- |
-
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MOQ: 25 MPQ: 1
|
IC BRIDGE DRIVER FOR N-CH MOSFET
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Tube | 10 V ~ 35 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.6V | 6A，6A | ||
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Richtek USA Inc. |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
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IC HI-SIDE MOSFET SWITCH DIP8
|
Tube | 10 V ~ 20 V | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | Independent | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA | ||
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Richtek USA Inc. |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
|
IC HI-SIDE MOSFET SWITCH DIP8
|
Tube | 10 V ~ 20 V | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | Independent | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA | ||
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|
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Richtek USA Inc. |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC HI-SIDE MOSFET SWITCH DIP8
|
Tube | 13 V ~ 20 V | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | Independent | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA | ||
|
|
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Richtek USA Inc. |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC HI-SIDE MOSFET SWITCH DIP8
|
Tube | 13 V ~ 20 V | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | Independent | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 300mA，600mA | ||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
1.5A DUAL MOSFET DRVR
|
- | 4.5 V ~ 18 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A |
