- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 401
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
8,446
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14DIP
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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IXYS Integrated Circuits Division |
2,677
|
3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET N-CH 14A LO SIDE TO-220-5
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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Renesas Electronics America Inc. |
1,614
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER FET FULL BRIDGE 20DIP
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Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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Infineon Technologies |
1,697
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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Tube | - | 12 V ~ 20 V | -55°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 6V，9.5V | 2A，2.5A | ||
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IXYS Integrated Circuits Division |
1,427
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRIVER LOW SIDE 5TO220
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Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
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Texas Instruments |
3,014
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL NON-INVERT PWR DRV 8DIP
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Tube | - | 5 V ~ 35 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 3A，3A | ||
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Powerex Inc. |
1,469
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DRVR FOR IGBT MOD
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Bulk | - | 14 V ~ 15 V | -20°C ~ 60°C (TA) | 14-SIP Module，12 Leads | Module | Single | Low-Side | 1 | IGBT | - | 500ns，300ns | - | 2A，2A | ||
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Powerex Inc. |
2,246
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC IGBT GATE DVR/DC-DC CONV 12A
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Bulk | - | 14.2 V ~ 15.8 V | -20°C ~ 60°C (TA) | 21-SIP Module | Module | Single | Low-Side | 1 | IGBT | - | 300ns，300ns | - | 12A，12A | ||
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Texas Instruments |
6,078
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL PERIPHERAL DRIVER 8-DIP
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Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
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Texas Instruments |
3,139
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL PERIPHERAL DRIVER 8-DIP
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Tube | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Independent | Low-Side | 2 | - | - | 50ns，90ns | 0.8V，2V | 500mA，500mA | ||
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IXYS Integrated Circuits Division |
2,946
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 9A NON-INV 8-DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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IXYS Integrated Circuits Division |
1,461
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL NONINV 8DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm)，6 Leads | 8-DIP | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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Texas Instruments |
2,876
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR LO-SIDE DL 5A 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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Infineon Technologies |
2,624
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Texas Instruments |
4,512
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL HIGH SPD FET DRVR 8-DIP
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Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
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Infineon Technologies |
2,628
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER DUAL LOW SIDE 8DIP
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Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 15ns，10ns | 0.8V，2.7V | 2.3A，3.3A | ||
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IXYS Integrated Circuits Division |
1,719
|
3 jours |
-
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MOQ: 1 MPQ: 1
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MOSFET DVR ULT FAST 14A 8-DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，18ns | 0.8V，3V | 14A，14A | ||
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Infineon Technologies |
2,399
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC HIGH SIDE DRIVER SGL 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
2,602
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 600V 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 22ns，18ns | 0.8V，2.5V | 4A，4A | ||
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Infineon Technologies |
2,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA |
