- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Channel Type：
-
- Driven Configuration：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Conditions sélectionnées:
Découvrez les produits 46
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|
|
|
Texas Instruments |
3,014
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL NON-INVERT PWR DRV 8DIP
|
Tube | 5 V ~ 35 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
|
|
|
Infineon Technologies |
1,189
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 10ns，15ns | 6V，9.5V | ||
|
|
|
Texas Instruments |
201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NON-INVERT PWR DRIVER 16-DIP
|
Tube | 5 V ~ 35 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
|
|
|
Powerex Inc. |
48
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DVR ISO 3A
|
Bulk | 14 V ~ 17 V | -20°C ~ 70°C (TA) | 14-SIP Module，12 Leads | Module | Non-Inverting | Single | Low-Side | 1 | IGBT | - | 300ns，300ns | - | ||
|
|
|
Texas Instruments |
10
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 8DIP
|
Tube | 5 V ~ 35 V | -25°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 75 MPQ: 1
|
IC NON-INVERT PWR DRIVER 16-DIP
|
Tube | 5 V ~ 35 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC DUAL NON-INVERT PWR DRV 8DIP
|
Tube | 5 V ~ 35 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 50 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 8DIP
|
Tube | 5 V ~ 35 V | -25°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 54 MPQ: 1
|
IC DRIVER QUAD HI SIDE 20-DIP
|
Tube | 7 V ~ 28 V | -25°C ~ 150°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-DIP | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | - | 0.8V，2V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 75 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16DIP
|
Tube | 5 V ~ 35 V | -25°C ~ 85°C (TA) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 75 MPQ: 1
|
IC DUAL NON-INV PWR DRVR 16DIP
|
Tube | 5 V ~ 35 V | -25°C ~ 85°C (TA) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | ||
|
|
|
Powerex Inc. |
Enquête
|
- |
-
|
MOQ: 21 MPQ: 1
|
IC IGBT GATE DVR ISO 3A
|
Bulk | 14 V ~ 15 V | -20°C ~ 60°C (TA) | 14-SIP Module，12 Leads | Module | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 300ns，300ns | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1500 MPQ: 1
|
IC GATE DVR MONO HI/LO 14DIP
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 4.5V，9.5V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 36 MPQ: 1
|
IC DRIVER QUAD HI SIDE 20-DIP
|
Tube | 7 V ~ 28 V | -25°C ~ 150°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-DIP | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | - | 0.8V，2V | ||
|
|
Microchip Technology |
975
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
243
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8-DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
163
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 3A HS 8DIP
|
Tube | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | |||
|
|
Microchip Technology |
452
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V | |||
|
|
Microchip Technology |
115
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 28ns，32ns | 0.8V，2.4V |
