Fabricant:
Supplier Device Package:
Driven Configuration:
Number of Drivers:
Rise / Fall Time (Typ):
Current - Peak Output (Source, Sink):
Découvrez les produits 7
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Operating Temperature Package / Case Supplier Device Package Channel Type Driven Configuration Number of Drivers Gate Type Rise / Fall Time (Typ) Current - Peak Output (Source, Sink)
MAX620CPN+
Maxim Integrated
61
3 jours
-
MOQ: 1  MPQ: 1
IC DRVR MOSFET QUAD 18-DIP
0°C ~ 70°C (TA) 18-DIP (0.300",7.62mm) 18-PDIP Independent High-Side 4 N-Channel MOSFET 1.7μs,2.5μs -
MAX621CPN
Maxim Integrated
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DVR MOSFET QUAD HI-SIDE 18DIP
0°C ~ 70°C (TA) 18-DIP (0.300",7.62mm) 18-PDIP Independent High-Side 4 N-Channel MOSFET 1.7μs,2.5μs -
MAX620CPN
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC DVR QUAD HISIDE MOSFET 18-DIP
0°C ~ 70°C (TA) 18-DIP (0.300",7.62mm) 18-PDIP Independent High-Side 4 N-Channel MOSFET 1.7μs,2.5μs -
MAX620EPN
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC DVR QUAD HISIDE MOSFET 18-DIP
-40°C ~ 85°C (TA) 18-DIP (0.300",7.62mm) 18-PDIP Independent High-Side 4 N-Channel MOSFET 1.7μs,2.5μs -
EL7155CN
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 600  MPQ: 1
IC DVR PIN 40MHZ 3STATE 8DIP
-40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Synchronous High-Side or Low-Side 2 IGBT 14.5ns,15ns 3.5A,3.5A
EL7156CN
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 600  MPQ: 1
IC DVR PIN 40MHZ 3STATE 8DIP
-40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Single High-Side or Low-Side 1 IGBT 14.5ns,15ns 3.5A,3.5A
EL7156CNZ
Renesas Electronics America Inc.
Enquête
-
-
MOQ: 600  MPQ: 1
IC PIN DRIVER 40MHZ 3ST 8-DIP
-40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Single High-Side or Low-Side 1 IGBT 14.5ns,15ns 3.5A,3.5A