- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 21
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
1,899
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET 3PHASE N-CH 24DIP
|
7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-DIP (0.300"，7.62mm) | 24-PDIP | Inverting，Non-Inverting | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns，10ns | 1V，2.5V | 500mA，500mA | ||
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|
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Infineon Technologies |
222
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
1,273
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 3-PHASE BRIDGE 28-DIP
|
10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 1200V | 90ns，40ns | 0.8V，2V | 250mA，500mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，3V | 200mA，350mA | ||
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|
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Infineon Technologies |
10
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 3-PHASE BRIDGE 28-DIP
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10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 1200V | 90ns，40ns | 0.8V，2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 90ns，40ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1482 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 52 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
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10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 90ns，40ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 65 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 104 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，3V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 65 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 52 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 90ns，40ns | 0.8V，2.2V | 250mA，500mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting，Non-Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，3V | 200mA，350mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 13 MPQ: 1
|
IC DRIVER 3-PHASE BRIDGE 28-DIP
|
10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 1200V | 90ns，40ns | 0.8V，2V | 250mA，500mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 13 MPQ: 1
|
IC DRIVER 3-PHASE BRIDGE 28-DIP
|
10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 1200V | 90ns，40ns | 0.8V，2V | 250mA，500mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1300 MPQ: 1
|
IC DRIVER 3PHASE 600V 28DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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|
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER HI SIDE 3PHASE 16DIP
|
7 V ~ 15 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Inverting | High-Side | 3 | N-Channel MOSFET | 95V | 35ns，30ns | 1V，2.5V | - | ||
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|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRIVER 300MA 3-PHASE 16DIP
|
7 V ~ 15 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Inverting | High-Side | 3 | N-Channel MOSFET | 95V | 35ns，30ns | 1V，2.5V | - | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC DRIVER 3-PHASE FET 24DIP
|
7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-DIP (0.300"，7.62mm) | 24-PDIP | Inverting，Non-Inverting | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns，10ns | 1V，2.5V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 52 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 90ns，40ns | 0.8V，2.2V | 250mA，500mA |
