- Packaging：
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- Series：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 199
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
8,446
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14DIP
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Renesas Electronics America Inc. |
1,614
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER FET FULL BRIDGE 20DIP
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Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Non-Inverting | Independent | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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Infineon Technologies |
1,697
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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Tube | - | 12 V ~ 20 V | -55°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 6V，9.5V | 2A，2.5A | ||
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Infineon Technologies |
18,868
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF BRDG SELF-OSC 8-DIP
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Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Synchronous | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
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Infineon Technologies |
2,498
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF BRIDGE SELF OSC 8DIP
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Tube | - | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Synchronous | 2 | N-Channel MOSFET | 600V | 120ns，50ns | - | 180mA，260mA | ||
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Infineon Technologies |
2,998
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 600V 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Infineon Technologies |
2,820
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE OSC 8DIP
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Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Synchronous | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
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Infineon Technologies |
2,624
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Maxim Integrated |
351
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL PWR 8-DIP
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Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Infineon Technologies |
2,602
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 600V 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 22ns，18ns | 0.8V，2.5V | 4A，4A | ||
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Infineon Technologies |
2,000
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
2,122
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 8.3V，12.6V | 250mA，500mA | ||
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Infineon Technologies |
2,868
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DVR HALF BRIDGE 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
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Infineon Technologies |
1,434
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR HI/LO SIDE 14-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
1,169
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Infineon Technologies |
2,599
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | 2 | N-Channel MOSFET | 200V | 35ns，20ns | 0.7V，2.2V | 1A，1A | ||
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Infineon Technologies |
2,050
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 8DIP
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Tube | - | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
1,189
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 200V | 10ns，15ns | 6V，9.5V | 3A，3A | ||
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Infineon Technologies |
195
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Renesas Electronics America Inc. |
672
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER FET H-BRIDGE 16DIP
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Tube | - | 8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Non-Inverting | Independent | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1V，2.5V | 1.4A，1.3A |
