- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 407
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
8,446
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14DIP
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Maxim Integrated |
952
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR DUAL 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Renesas Electronics America Inc. |
409
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER DUAL HS 8DIP
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Tube | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Renesas Electronics America Inc. |
1,614
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER FET FULL BRIDGE 20DIP
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Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Non-Inverting | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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Infineon Technologies |
1,697
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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Tube | - | 12 V ~ 20 V | -55°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 6V，9.5V | 2A，2.5A | ||
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Texas Instruments |
2,637
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMPLEMENT PWR DRIVER 16-DIP
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Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Inverting，Non-Inverting | Low-Side | 2 | N-Channel MOSFET | - | 40ns，40ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Texas Instruments |
3,014
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL NON-INVERT PWR DRV 8DIP
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Tube | - | 5 V ~ 35 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 3A，3A | ||
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Texas Instruments |
14,018
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL PERIPHERAL DRIVER 8-DIP
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Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
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Texas Instruments |
7,532
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL PERIPHERAL DRIVER 8-DIP
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Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
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Texas Instruments |
6,078
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL PERIPHERAL DRIVER 8-DIP
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Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 5ns，7ns | 0.8V，2V | 500mA，500mA | ||
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Texas Instruments |
3,139
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL PERIPHERAL DRIVER 8-DIP
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Tube | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Low-Side | 2 | - | - | 50ns，90ns | 0.8V，2V | 500mA，500mA | ||
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IXYS Integrated Circuits Division |
1,461
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR 4A DUAL NONINV 8DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm)，6 Leads | 8-DIP | Non-Inverting | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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Infineon Technologies |
2,998
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 600V 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Texas Instruments |
2,876
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC GATE DVR LO-SIDE DL 5A 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 140°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 7ns，6ns | 1V，2.3V | 5A，5A | ||
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Infineon Technologies |
2,624
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Texas Instruments |
3,794
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR DUAL HS 4A 8-DIP
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Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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Infineon Technologies |
2,628
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER DUAL LOW SIDE 8DIP
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Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 15ns，10ns | 0.8V，2.7V | 2.3A，3.3A | ||
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Maxim Integrated |
351
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL PWR 8-DIP
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Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Infineon Technologies |
2,602
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 600V 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 22ns，18ns | 0.8V，2.5V | 4A，4A | ||
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Infineon Technologies |
1,434
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR HI/LO SIDE 14-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA |
