- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 31
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
8,446
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14DIP
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3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 2A，2A | ||
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|
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Infineon Technologies |
1,697
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
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12 V ~ 20 V | -55°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 2A，2.5A | ||
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Infineon Technologies |
2,399
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC HIGH SIDE DRIVER SGL 8-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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|
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Infineon Technologies |
1,434
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI/LO SIDE 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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|
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Infineon Technologies |
1,189
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 10ns，15ns | 3A，3A | ||
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|
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Infineon Technologies |
1,792
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI/LO SIDE 14-DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 2A，2A | ||
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|
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Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH-SIDE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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|
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Infineon Technologies |
168
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE 600V 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 2.5A，2.5A | ||
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|
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Infineon Technologies |
25
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET/IGBT 1CH 8-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 290mA，600mA | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 500V 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 2.5A，2.5A | ||
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|
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Infineon Technologies |
5
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET/IGBT 1CH 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 290mA，600mA | ||
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|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC GATE DRVR 600V HI/LO 14DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel，P-Channel MOSFET | 600V | 9.4ns，9.7ns | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1500 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 14-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 290mA，600mA | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 175 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
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3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 225 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 14-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 175 MPQ: 1
|
IC MOSFET DRVR HI/LO SIDE 14-DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 2A，2A | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 300 MPQ: 1
|
IC MOSFET DRIVER SGL-CH 8-DIP
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10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 25 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | 14-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 2A，2A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 300 MPQ: 1
|
IC MOSFET DRIVER HIGH-SIDE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 250mA，500mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
12 V ~ 20 V | -55°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 1200V | 25ns，17ns | 2A，2.5A |
