- Series：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Input Type：
-
- Channel Type：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 43
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Infineon Technologies |
2,399
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH SIDE DRIVER SGL 8-DIP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
2,200
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER LIMITING 8-DIP
|
- | 0 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 500V | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
|
|
|
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH-SIDE 8-DIP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
228
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURR SENSE 1CH 600V 8DIP
|
- | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Maxim Integrated |
61
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET QUAD 18-DIP
|
- | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Non-Inverting | Independent | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | - | ||
|
|
|
Infineon Technologies |
25
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET/IGBT 1CH 8-DIP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 6V，9.5V | 290mA，600mA | ||
|
|
|
Infineon Technologies |
5
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET/IGBT 1CH 8-DIP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 6V，9.5V | 290mA，600mA | ||
|
|
|
IXYS Integrated Circuits Division |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC HIGH SIDE DRIVER 8DIP
|
- | 9 V ~ 12 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 23ns，20ns | 0.8V，3V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DVR CURR SENSE 1CH 600V 8DIP
|
- | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 54 MPQ: 1
|
IC DRIVER QUAD HI SIDE 20-DIP
|
- | 7 V ~ 28 V | -25°C ~ 150°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-DIP | Non-Inverting | Independent | 4 | N-Channel MOSFET | - | - | 0.8V，2V | 3A，3A | ||
|
|
|
STMicroelectronics |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRIVER GATE IGBT/MOSFET 8DIP
|
- | 12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DVR MOSFET QUAD HI-SIDE 18DIP
|
- | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Non-Inverting | Independent | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | - | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC MOSFET DRIVER SGL-CH 8-DIP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 150 MPQ: 1
|
IC MOSFET DRIVER LIMITING 8-DIP
|
- | 0 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | 500V | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC MOSFET DRIVER HIGH-SIDE 8-DIP
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 150 MPQ: 1
|
IC MOSFET DRIVER HIGH-SIDE 8-DIP
|
- | 13 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | 1 | IGBT，N-Channel MOSFET | 600V | 250ns，250ns | 0.8V，3V | 130mA，130mA | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DVR QUAD HISIDE MOSFET 18-DIP
|
- | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Non-Inverting | Independent | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | - | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DVR QUAD HISIDE MOSFET 18-DIP
|
- | 4.5 V ~ 16.5 V | -40°C ~ 85°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Non-Inverting | Independent | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | - | ||
|
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 2800 MPQ: 1
|
IC PWM HIGH-SIDE SWITCH 8-DIP
|
- | 25V (Max) | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | Single | 1 | N-Channel MOSFET | - | - | - | - | ||
|
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC DRIVER MOSFET HI SIDE HS 8DIP
|
- | 12 V ~ 36 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | - | 400ns，400ns | 0.8V，2V | - |
