- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 47
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Renesas Electronics America Inc. |
1,614
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL BRIDGE 20DIP
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
672
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET H-BRIDGE 16DIP
|
8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 95V | 9ns，9ns | 1V，2.5V | 1.4A，1.3A | ||
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|
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Infineon Technologies |
1,460
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL SELF OSC 14-DIP
|
10 V ~ 15.6 V | -25°C ~ 125°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | RC Input Circuit | Synchronous | Half-Bridge | N-Channel MOSFET | 600V | 120ns，50ns | 4.7V，9.3V | 180mA，260mA | ||
|
|
|
Renesas Electronics America Inc. |
1,263
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL BRIDGE 20DIP
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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|
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Texas Instruments |
123
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC QUAD MOSFET DRIVER 16-DIP
|
4.75 V ~ 28 V | 0°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Inverting | Independent | Low-Side | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | 500mA，500mA | ||
|
|
|
Renesas Electronics America Inc. |
984
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DRIVER H-BRIDGE 1A 16-DIP
|
8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Inverting，Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 70V | 9ns，9ns | 1V，2.5V | 1A，1A | ||
|
|
|
Renesas Electronics America Inc. |
680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 60V/2.5A HF 20DIP
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Inverting，Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 75V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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|
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Maxim Integrated |
61
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR MOSFET QUAD 18-DIP
|
4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Non-Inverting | Independent | High-Side | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | - | ||
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|
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 54 MPQ: 1
|
IC DRIVER QUAD HI SIDE 20-DIP
|
7 V ~ 28 V | -25°C ~ 150°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-DIP | Non-Inverting | Independent | High-Side | N-Channel MOSFET | - | - | 0.8V，2V | 3A，3A | ||
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Maxim Integrated |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC DVR MOSFET QUAD HI-SIDE 18DIP
|
4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Non-Inverting | Independent | High-Side | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | - | ||
|
|
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DVR QUAD HISIDE MOSFET 18-DIP
|
4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Non-Inverting | Independent | High-Side | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | - | ||
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|
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Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DVR QUAD HISIDE MOSFET 18-DIP
|
4.5 V ~ 16.5 V | -40°C ~ 85°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Non-Inverting | Independent | High-Side | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | - | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 720 MPQ: 1
|
IC DRIVER FULL-BRIDGE 20-DIP
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 720 MPQ: 1
|
IC DRIVER FULL-BRIDGE 20-DIP
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 500 MPQ: 1
|
IC DRIVER H-BRIDGE 16-DIP
|
8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 95V | 9ns，9ns | 1V，2.5V | 1.4A，1.3A | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 36 MPQ: 1
|
IC DRIVER QUAD HI SIDE 20-DIP
|
7 V ~ 28 V | -25°C ~ 150°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-DIP | Non-Inverting | Independent | High-Side | N-Channel MOSFET | - | - | 0.8V，2V | 3A，3A | ||
|
|
Microchip Technology |
466
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD AND 14DIP
|
4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-PDIP | Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
316
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR AND/INV 14DIP
|
4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-PDIP | Inverting，Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Linear Technology/Analog Devices |
377
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER N-CH QUAD 20DIP
|
8 V ~ 48 V | 0°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Non-Inverting | Independent | High-Side | N-Channel MOSFET | - | - | 0.8V，2V | - | |||
|
|
Microchip Technology |
166
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 14-DIP
|
4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A |
