- Series：
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- Voltage - Supply：
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- Supplier Device Package：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 20
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Package / Case | Supplier Device Package | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Package / Case | Supplier Device Package | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
|
- | 10 V ~ 20 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Synchronous | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 200mA，350mA | ||
|
|
|
Infineon Technologies |
2,050
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
|
- | 5 V ~ 20 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Synchronous | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 200mA，350mA | ||
|
|
|
Infineon Technologies |
337
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET/IGBT DVR HV HS 8-DIP
|
- | 10 V ~ 20 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Independent | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 200mA，350mA | ||
|
|
|
Infineon Technologies |
108
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8DIP
|
- | 5 V ~ 20 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Independent | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 200mA，350mA | ||
|
|
|
Infineon Technologies |
191
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8-DIP
|
- | 10 V ~ 20 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Synchronous | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 200mA，350mA | ||
|
|
|
Infineon Technologies |
132
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
|
- | 10 V ~ 20 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Independent | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 200mA，350mA | ||
|
|
|
Infineon Technologies |
92
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14DIP
|
- | 10 V ~ 20 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Independent | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 200mA，350mA | ||
|
|
|
Infineon Technologies |
4
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-DIP
|
- | 10 V ~ 20 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Synchronous | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8DIP
|
- | 10 V ~ 20 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Independent | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 200mA，350mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1500 MPQ: 1
|
IC DRIVER HALF BRIDGE 14DIP
|
- | 10 V ~ 20 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Independent | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 200mA，350mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DRIVER HIGH/LOW DRIVER 8-DIP
|
- | 10 V ~ 20 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Independent | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
|
- | 10 V ~ 20 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Independent | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DRIVER HIGH/LOW DRIVER 14-DIP
|
- | 10 V ~ 20 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Independent | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 225 MPQ: 1
|
IC DRIVER HIGH/LOW DRIVER 14-DIP
|
- | 10 V ~ 20 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Independent | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
- | 10 V ~ 20 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Synchronous | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DRIVER HALF-BRIDGE 14-DIP
|
- | 10 V ~ 20 V | 14-DIP (0.300"，7.62mm) | 14-DIP | Synchronous | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8-DIP
|
- | 5 V ~ 20 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Independent | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 250 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
- | 5 V ~ 20 V | 8-DIP (0.300"，7.62mm) | 8-PDIP | Synchronous | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 160 MPQ: 1
|
IC POWER MODULE 1.6A 500V 11-SIP
|
iMOTION | 10 V ~ 20 V | 11-SIP，9 Leads | 11-SIP | Independent | N-Channel MOSFET | 500V | - | - | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
PWR MOD 180W GATE DRIVER 11-SIP
|
iMOTION | 10 V ~ 20 V | 11-SIP，9 Leads | 11-SIP | Independent | N-Channel MOSFET | 500V | - | - |
