- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Driven Configuration：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Conditions sélectionnées:
Découvrez les produits 78
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Texas Instruments |
4,778
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL MOSFET DRIVER 8-DIP
|
4.75 V ~ 5.25 V，4.75 V ~ 24 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Low-Side | 2 | N-Channel MOSFET | - | - | 0.8V，2V | 500mA，500mA | ||
|
|
|
Infineon Technologies |
18,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
|
|
|
Infineon Technologies |
2,498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE SELF OSC 8DIP
|
10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns，50ns | - | 180mA，260mA | ||
|
|
|
Infineon Technologies |
2,820
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE OSC 8DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
|
|
|
Texas Instruments |
4,512
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HIGH SPD FET DRVR 8-DIP
|
4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
Infineon Technologies |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
2,122
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 8.3V，12.6V | 250mA，500mA | ||
|
|
|
Infineon Technologies |
2,868
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.5V | 1.9A，2.3A | ||
|
|
|
Infineon Technologies |
2,050
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
|
5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
1,460
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FULL SELF OSC 14-DIP
|
10 V ~ 15.6 V | -25°C ~ 125°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | RC Input Circuit | Half-Bridge | 4 | N-Channel MOSFET | 600V | 120ns，50ns | 4.7V，9.3V | 180mA，260mA | ||
|
|
|
Renesas Electronics America Inc. |
1,263
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET FULL BRIDGE 20DIP
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Non-Inverting | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Texas Instruments |
3,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL 2A MOSFET DRIVER 8-DIP
|
4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
Infineon Technologies |
1,963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | - | ||
|
|
|
Infineon Technologies |
2,967
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
|
|
|
STMicroelectronics |
1,300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRDG HV W/OSC 8DIP
|
10 V ~ 16.6 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-Mini DIP | RC Input Circuit | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | - | - | 170mA，270mA | ||
|
|
|
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR SELF-OSC HALF BRG 8-DIP
|
10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns，50ns | - | 180mA，260mA | ||
|
|
|
Texas Instruments |
217
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL 2A COMP FET DRIVER 8-DIP
|
4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 60V/2.5A HF 20DIP
|
9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Inverting，Non-Inverting | Half-Bridge | 4 | N-Channel MOSFET | 75V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
|
|
|
Infineon Technologies |
997
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
|
|
|
Infineon Technologies |
165
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，35ns | 0.8V，2.5V | 290mA，600mA |
