- Packaging:
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- Series:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 113
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Maxim Integrated |
952
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Texas Instruments |
5,125
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPL MOSFET DRVR TO-220-5
|
Tube | - | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 85ns,85ns | 0.8V,2V | 6A,6A | ||||
Texas Instruments |
2,637
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT PWR DRIVER 16-DIP
|
Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | 16-DIP (0.300",7.62mm) | 16-PDIP | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns,40ns | 0.8V,2.2V | 1.5A,1.5A | ||||
Infineon Technologies |
2,998
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 600V 8DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,50ns | 0.8V,3V | 210mA,360mA | ||||
Texas Instruments |
3,794
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-DIP
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Infineon Technologies |
195
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 8DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Renesas Electronics America Inc. |
1,899
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET 3PHASE N-CH 24DIP
|
Tube | - | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-DIP (0.300",7.62mm) | 24-PDIP | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns,10ns | 1V,2.5V | 500mA,500mA | ||||
Texas Instruments |
657
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HS MOSFET DRIVER 16-DIP
|
Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | 16-DIP (0.300",7.62mm) | 16-PDIP | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns,30ns | 0.8V,2.2V | 1.5A,1.5A | ||||
Texas Instruments |
3,352
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT MOSFET DRVR 8-DIP
|
Tube | - | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 85ns,85ns | 0.8V,2V | 6A,6A | ||||
Texas Instruments |
3,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL 2A MOSFET DRIVER 8-DIP
|
Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | 2A,2A | ||||
Texas Instruments |
2,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT POWER DRIVER 8-DIP
|
Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns,60ns | 0.8V,2.2V | 1.5A,1.5A | ||||
Maxim Integrated |
201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR INV/NONINV 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Infineon Technologies |
1,086
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF BRIDGE 14DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-DIP | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Texas Instruments |
988
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH CURRENT FET DRVR TO220-5
|
Tube | - | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 85ns,85ns | 0.8V,2V | 6A,6A | ||||
Texas Instruments |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HIGH SID POWER DRIVER TO220-5
|
Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | TO-220-5 | TO-220-5 | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns,60ns | 0.8V,2.2V | 2A,2A | ||||
Texas Instruments |
217
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL 2A COMP FET DRIVER 8-DIP
|
Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | 2A,2A | ||||
Renesas Electronics America Inc. |
984
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DRIVER H-BRIDGE 1A 16-DIP
|
Tube | - | 8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300",7.62mm) | 16-PDIP | Independent | Half-Bridge | 4 | N-Channel MOSFET | 70V | 9ns,9ns | 1V,2.5V | 1A,1A | ||||
Renesas Electronics America Inc. |
680
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 60V/2.5A HF 20DIP
|
Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300",7.62mm) | 20-PDIP | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 75V | 10ns,10ns | 1V,2.5V | 2.6A,2.4A | ||||
Renesas Electronics America Inc. |
531
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET DUAL HS 8-DIP
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 10ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Texas Instruments |
561
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT PWR DRVR TO-220-5
|
Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | TO-220-5 | TO-220-5 | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns,60ns | 0.8V,2.2V | 2A,2A |