- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Gate Type:
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 21
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Renesas Electronics America Inc. |
1,899
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER FET 3PHASE N-CH 24DIP
|
7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-DIP (0.300",7.62mm) | 24-PDIP | Inverting,Non-Inverting | 3-Phase | N-Channel MOSFET | 95V | 20ns,10ns | 1V,2.5V | 500mA,500mA | ||||
Infineon Technologies |
222
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
1,273
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 3-PHASE BRIDGE 28-DIP
|
10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 1200V | 90ns,40ns | 0.8V,2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,3V | 200mA,350mA | ||||
Infineon Technologies |
10
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 3-PHASE BRIDGE 28-DIP
|
10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 1200V | 90ns,40ns | 0.8V,2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 90ns,40ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1482 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting | Independent | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1482 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 52 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 90ns,40ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 65 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,3V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 65 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting | Independent | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 65 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 80ns,35ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 52 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 90ns,40ns | 0.8V,2.2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting,Non-Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,3V | 200mA,350mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 13 MPQ: 1
|
IC DRIVER 3-PHASE BRIDGE 28-DIP
|
10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 1200V | 90ns,40ns | 0.8V,2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 13 MPQ: 1
|
IC DRIVER 3-PHASE BRIDGE 28-DIP
|
10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 1200V | 90ns,40ns | 0.8V,2V | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1300 MPQ: 1
|
IC DRIVER 3PHASE 600V 28DIP
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 125ns,50ns | 0.8V,2.5V | 200mA,350mA | ||||
Renesas Electronics America Inc. |
Enquête
|
- |
-
|
MOQ: 300 MPQ: 1
|
IC DRIVER 3-PHASE FET 24DIP
|
7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-DIP (0.300",7.62mm) | 24-PDIP | Inverting,Non-Inverting | 3-Phase | N-Channel MOSFET | 95V | 20ns,10ns | 1V,2.5V | 500mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 52 MPQ: 1
|
IC DRIVER BRIDGE 3-PHASE 28-DIP
|
10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600",15.24mm) | 28-PDIP | Inverting | 3-Phase | IGBT,N-Channel MOSFET | 600V | 90ns,40ns | 0.8V,2.2V | 250mA,500mA |