Découvrez les produits 28
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IR2117PBF
Infineon Technologies
2,399
3 jours
-
MOQ: 1  MPQ: 1
IC HIGH SIDE DRIVER SGL 8-DIP
10 V ~ 20 V 8-DIP (0.300",7.62mm) 8-PDIP Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 6V,9.5V 250mA,500mA
IR2111PBF
Infineon Technologies
2,122
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER HALF-BRIDGE 8-DIP
10 V ~ 20 V 8-DIP (0.300",7.62mm) 8-PDIP Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 8.3V,12.6V 250mA,500mA
IR2112PBF
Infineon Technologies
1,434
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DVR HI/LO SIDE 14-DIP
10 V ~ 20 V 14-DIP (0.300",7.62mm) 14-DIP Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 6V,9.5V 250mA,500mA
IR2118PBF
Infineon Technologies
3,000
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER HIGH-SIDE 8-DIP
10 V ~ 20 V 8-DIP (0.300",7.62mm) 8-PDIP Inverting Single High-Side 1 IGBT,N-Channel MOSFET 6V,9.5V 250mA,500mA
IR2127PBF
Infineon Technologies
2,958
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER CUR-SENSE 8-DIP
12 V ~ 20 V 8-DIP (0.300",7.62mm) 8-PDIP Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 0.8V,3V 250mA,500mA
IR21271PBF
Infineon Technologies
2,942
3 jours
-
MOQ: 1  MPQ: 1
IC DRIVER 600V 200/420MA 8-DIP
9 V ~ 20 V 8-DIP (0.300",7.62mm) 8-PDIP Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 0.8V,3V 250mA,500mA
IRS2127PBF
Infineon Technologies
228
3 jours
-
MOQ: 1  MPQ: 1
IC DVR CURR SENSE 1CH 600V 8DIP
12 V ~ 20 V 8-DIP (0.300",7.62mm) 8-PDIP Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 0.8V,2.5V 290mA,600mA
IR2128PBF
Infineon Technologies
Enquête
-
-
MOQ: 18000  MPQ: 1
IC MOSFET DRVR CURR SENSE 8DIP
12 V ~ 20 V 8-DIP (0.300",7.62mm) 8-PDIP Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 0.8V,3V 250mA,500mA
IRS21271PBF
Infineon Technologies
Enquête
-
-
MOQ: 3000  MPQ: 1
IC DVR CURR SENSE 1CH 600V 8DIP
9 V ~ 20 V 8-DIP (0.300",7.62mm) 8-PDIP Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 0.8V,2.5V 290mA,600mA
IR2131PBF
Infineon Technologies
Enquête
-
-
MOQ: 1482  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-DIP
10 V ~ 20 V 28-DIP (0.600",15.24mm) 28-PDIP Inverting Independent Half-Bridge 6 IGBT,N-Channel MOSFET 0.8V,2.2V 250mA,500mA
IR2151
Infineon Technologies
Enquête
-
-
MOQ: 250  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8-DIP
10 V ~ 20 V 8-DIP (0.300",7.62mm) 8-PDIP RC Input Circuit Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET - 125mA,250mA
IR2111
Infineon Technologies
Enquête
-
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MOQ: 250  MPQ: 1
IC DRIVER HALF-BRIDGE 8-DIP
10 V ~ 20 V 8-DIP (0.300",7.62mm) 8-PDIP Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 8.3V,12.6V 250mA,500mA
IR2112
Infineon Technologies
Enquête
-
-
MOQ: 225  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 14-DIP
10 V ~ 20 V 14-DIP (0.300",7.62mm) 14-DIP Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 6V,9.5V 250mA,500mA
IR2117
Infineon Technologies
Enquête
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MOQ: 300  MPQ: 1
IC MOSFET DRIVER SGL-CH 8-DIP
10 V ~ 20 V 8-DIP (0.300",7.62mm) 8-PDIP Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 6V,9.5V 250mA,500mA
IR2127
Infineon Technologies
Enquête
-
-
MOQ: 250  MPQ: 1
IC MOSFET DRIVER CUR-SENSE 8-DIP
12 V ~ 20 V 8-DIP (0.300",7.62mm) 8-PDIP Non-Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 0.8V,3V 250mA,500mA
IR2153
Infineon Technologies
Enquête
-
-
MOQ: 200  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8-DIP
10 V ~ 15.6 V 8-DIP (0.300",7.62mm) 8-PDIP RC Input Circuit Synchronous Half-Bridge 2 N-Channel MOSFET - -
IR2118
Infineon Technologies
Enquête
-
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MOQ: 300  MPQ: 1
IC MOSFET DRIVER HIGH-SIDE 8-DIP
10 V ~ 20 V 8-DIP (0.300",7.62mm) 8-PDIP Inverting Single High-Side 1 IGBT,N-Channel MOSFET 6V,9.5V 250mA,500mA
IR2128
Infineon Technologies
Enquête
-
-
MOQ: 250  MPQ: 1
IC MOSFET DRIVER CUR-SENSE 8-DIP
12 V ~ 20 V 8-DIP (0.300",7.62mm) 8-PDIP Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 0.8V,3V 250mA,500mA
IR2131
Infineon Technologies
Enquête
-
-
MOQ: 65  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-DIP
10 V ~ 20 V 28-DIP (0.600",15.24mm) 28-PDIP Inverting Independent Half-Bridge 6 IGBT,N-Channel MOSFET 0.8V,2.2V 250mA,500mA
IR2112-1
Infineon Technologies
Enquête
-
-
MOQ: 25  MPQ: 1
IC MOSFET DRVR HI/LO SIDE 14-DIP
10 V ~ 20 V 14-DIP (0.300",7.62mm),13 Leads 14-PDIP Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 6V,9.5V 250mA,500mA