- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 782
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
3,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRVR SELF-OSC HALF BRG 8-DIP
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Tube | - | 10 V ~ 15.4 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 120ns，50ns | - | 180mA，260mA | ||
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Texas Instruments |
527
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL HS 9A 8-DIP
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Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A | ||
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Maxim Integrated |
201
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR INV/NONINV 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Infineon Technologies |
337
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET/IGBT DVR HV HS 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 150ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
1,086
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 14DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Infineon Technologies |
135
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Maxim Integrated |
322
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRV SGL 6A HS 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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Renesas Electronics America Inc. |
771
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC PWR MOSFET DVR SNGL 8-DIP
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Bulk | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 4A，4A | ||
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Texas Instruments |
988
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC HIGH CURRENT FET DRVR TO220-5
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Tube | - | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
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Texas Instruments |
1,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC HIGH SID POWER DRIVER TO220-5
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Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | TO-220-5 | TO-220-5 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns，60ns | 0.8V，2.2V | 2A，2A | ||
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Texas Instruments |
217
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DUAL 2A COMP FET DRIVER 8-DIP
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Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
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Renesas Electronics America Inc. |
984
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC FET DRIVER H-BRIDGE 1A 16-DIP
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Tube | - | 8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Inverting，Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 70V | 9ns，9ns | 1V，2.5V | 1A，1A | ||
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Renesas Electronics America Inc. |
680
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC FET DVR 60V/2.5A HF 20DIP
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Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Inverting，Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 75V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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Renesas Electronics America Inc. |
531
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL HS 8-DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
3,142
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL PWR 8-DIP
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Tube | - | 4.5 V ~ 15 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Infineon Technologies |
7,607
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER LOW SIDE 8DIP
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Tube | - | 12 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
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Texas Instruments |
561
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMPLEMENT PWR DRVR TO-220-5
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Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | TO-220-5 | TO-220-5 | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns，60ns | 0.8V，2.2V | 2A，2A | ||
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Texas Instruments |
220
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMPLEMENTARY PWR DRVR 16-DIP
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Tube | - | 5 V ~ 40 V | -25°C ~ 85°C (TA) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，40ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Texas Instruments |
133
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMPLEMENTARY PWR DRVR 8-DIP
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Tube | - | 5 V ~ 40 V | -25°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns，60ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Texas Instruments |
201
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC NON-INVERT PWR DRIVER 16-DIP
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Tube | - | 5 V ~ 35 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 3A，3A |
