- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 782
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
3,710
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-DIP
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Texas Instruments |
3,616
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL 2A MOSFET DRIVER 8-DIP
|
Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting,Non-Inverting | Synchronous | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 14ns,15ns | 1V,4V | 2A,2A | ||||
Texas Instruments |
2,949
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DUAL HS PWR FET DRVR 8-DIP
|
Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,15ns | 1V,2V | 4A,4A | ||||
Infineon Technologies |
1,963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF BRDG SELF-OSC 8-DIP
|
Tube | - | 10 V ~ 15.6 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns,45ns | - | - | ||||
Infineon Technologies |
3,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER HIGH-SIDE 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 6V,9.5V | 250mA,500mA | ||||
Infineon Technologies |
2,067
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 14-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 22ns,18ns | 0.8V,2.5V | 4A,4A | ||||
Infineon Technologies |
2,958
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER CUR-SENSE 8-DIP
|
Tube | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,3V | 250mA,500mA | ||||
Infineon Technologies |
2,942
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER 600V 200/420MA 8-DIP
|
Tube | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,3V | 250mA,500mA | ||||
IXYS Integrated Circuits Division |
631
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 9A DUAL HS TO220-5
|
Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 22ns,15ns | 0.8V,3V | 9A,9A | ||||
Texas Instruments |
123
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC QUAD MOSFET DRIVER 16-DIP
|
Tube | - | 4.75 V ~ 28 V | 0°C ~ 150°C (TJ) | 16-DIP (0.300",7.62mm) | 16-PDIP | Inverting | Independent | Low-Side | 4 | N-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | 500mA,500mA | ||||
Infineon Technologies |
245
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 600V 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 100ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
1,092
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 14-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Maxim Integrated |
103
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR DUAL NONINV 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Infineon Technologies |
2,742
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 8DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,20ns | 0.8V,2.7V | 1.9A,2.3A | ||||
Renesas Electronics America Inc. |
1,372
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC PWR MOSFET DVR DUAL HS 8DIP
|
Tube | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 7.5ns,10ns | 0.8V,2.4V | 2A,2A | ||||
Texas Instruments |
2,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC COMPLEMENT POWER DRIVER 8-DIP
|
Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting,Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 60ns,60ns | 0.8V,2.2V | 1.5A,1.5A | ||||
Infineon Technologies |
2,967
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HALF-BRIDGE 8-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 200V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
STMicroelectronics |
1,300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRDG HV W/OSC 8DIP
|
Tube | - | 10 V ~ 16.6 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-Mini DIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | - | - | 170mA,270mA | ||||
Infineon Technologies |
168
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER HI/LO SIDE 600V 14-DIP
|
Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,17ns | 6V,9.5V | 2.5A,2.5A | ||||
Maxim Integrated |
150
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL PWR 8-DIP
|
Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns,20ns | 0.8V,2V | - |