- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 782
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
Enquête
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MOQ: 200 MPQ: 1
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IC DRIVER HI/LOW SIDE HV 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 85ns,35ns | 0.8V,2.3V | 250mA,500mA | ||||
ON Semiconductor |
Enquête
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- |
-
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MOQ: 200 MPQ: 1
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IC DRIVER HI/LOW SIDE HV 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 85ns,35ns | 0.8V,2.3V | 250mA,500mA | ||||
Maxim Integrated |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
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IC MOSFET DVR DUAL PWR DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300",7.62mm) | 8-DIP | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC MOSFET DRVR COTS
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Tube | Military,MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300",7.62mm) | 8-CERDIP | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC MOSFET DRVR COTS
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Tube | Military,MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300",7.62mm) | 8-CERDIP | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Maxim Integrated |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC MOSFET DRVR COTS
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Tube | Military,MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300",7.62mm) | 8-CERDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC MOSFET DRVR COTS
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Tube | Military,MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300",7.62mm) | 8-CERDIP | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC MOSFET DRVR COTS
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Tube | Military,MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300",7.62mm) | 8-CERDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,20ns | 0.8V,2.4V | 2A,2A | ||||
Maxim Integrated |
Enquête
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- |
-
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MOQ: 50 MPQ: 1
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IC DRIVER MOSFET COTS
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Tube | Military,MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300",7.62mm) | 8-CERDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 25 MPQ: 1
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IC DRIVER MOSF QUAD 1.2A 14-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 14-DIP (0.300",7.62mm) | 14-DIP | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 14ns,13ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
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-
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MOQ: 25 MPQ: 1
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IC DRIVER MOSFET QUAD 1.2A 14DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 14-DIP (0.300",7.62mm) | 14-DIP | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 14ns,13ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Richtek USA Inc. |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC HI-SIDE MOSFET SWITCH DIP8
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Tube | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-DIP (0.300",7.62mm) | 8-DIP | Non-Inverting | Independent | High-Side or Low-Side | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 300mA,600mA | ||||
Richtek USA Inc. |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC HI-SIDE MOSFET SWITCH DIP8
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Tube | - | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-DIP (0.300",7.62mm) | 8-DIP | Non-Inverting | Independent | High-Side or Low-Side | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 300mA,600mA | ||||
Richtek USA Inc. |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC HI-SIDE MOSFET SWITCH DIP8
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Tube | - | 13 V ~ 20 V | -40°C ~ 125°C (TA) | 8-DIP (0.300",7.62mm) | 8-DIP | Non-Inverting | Independent | High-Side or Low-Side | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 300mA,600mA | ||||
Richtek USA Inc. |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC HI-SIDE MOSFET SWITCH DIP8
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Tube | - | 13 V ~ 20 V | -40°C ~ 125°C (TA) | 8-DIP (0.300",7.62mm) | 8-DIP | Non-Inverting | Independent | High-Side or Low-Side | 2 | IGBT,N-Channel MOSFET | 600V | 70ns,35ns | 0.8V,2.5V | 300mA,600mA | ||||
Powerex Inc. |
Enquête
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- |
-
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MOQ: 25 MPQ: 1
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IC IGBT DRIVER
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Bulk | - | - | - | 14-SIP Module,12 Leads | - | - | - | - | - | - | - | - | - | - | ||||
IXYS |
Enquête
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-
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MOQ: 25 MPQ: 1
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IC DRIVER ISOPLUS I4-PAC
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Tube | - | - | - | i4-Pac?-5 (3 leads) | ISOPLUS i4-PAC? | - | - | - | - | - | - | - | - | - | ||||
IXYS |
Enquête
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- |
-
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MOQ: 275 MPQ: 1
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IC DRVR HALF BRIDGE GATE 14DIP
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Tube | - | - | - | 14-DIP (0.300",7.62mm) | 14-DIP | - | - | - | - | - | - | - | - | - | ||||
IXYS |
Enquête
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- |
-
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MOQ: 275 MPQ: 1
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IC DRVR HALF BRIDGE GATE 14DIP
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Tube | - | - | - | 14-DIP (0.300",7.62mm) | 14-DIP | - | - | - | - | - | - | - | - | - | ||||
Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC MOSFET DRVR COTS
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Tube | Military,MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300",7.62mm) | 8-CERDIP | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 20ns,20ns | 0.8V,2.4V | 1.5A,1.5A |