Number of Drivers:
Rise / Fall Time (Typ):
Découvrez les produits 782
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
NCP5111PG
ON Semiconductor
Enquête
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MOQ: 200  MPQ: 1
IC DRIVER HI/LOW SIDE HV 8DIP
Tube - 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 85ns,35ns 0.8V,2.3V 250mA,500mA
NCP5304PG
ON Semiconductor
Enquête
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-
MOQ: 200  MPQ: 1
IC DRIVER HI/LOW SIDE HV 8DIP
Tube - 10 V ~ 20 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 85ns,35ns 0.8V,2.3V 250mA,500mA
TSC428EPA
Maxim Integrated
Enquête
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MOQ: 2500  MPQ: 1
IC MOSFET DVR DUAL PWR DIP
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 8-DIP (0.300",7.62mm) 8-DIP Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 1.5A,1.5A
MAX4426MJA/883B
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSFET DRVR COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 0.8V,2.4V 1.5A,1.5A
MAX4429MJA/883B
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSFET DRVR COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Inverting Single Low-Side 1 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 6A,6A
MAX4427MJA/883B
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSFET DRVR COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 0.8V,2.4V 1.5A,1.5A
MAX626MJA/883B
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSFET DRVR COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 0.8V,2.4V 2A,2A
MAX627MJA/883B
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSFET DRVR COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,20ns 0.8V,2.4V 2A,2A
TSC427MJA/883B
Maxim Integrated
Enquête
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MOQ: 50  MPQ: 1
IC DRIVER MOSFET COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 25ns,25ns 0.8V,2.4V 1.5A,1.5A
MIC4468ZN
Microchip Technology
Enquête
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MOQ: 25  MPQ: 1
IC DRIVER MOSF QUAD 1.2A 14-DIP
Tube - 4.5 V ~ 18 V 0°C ~ 70°C (TA) 14-DIP (0.300",7.62mm) 14-DIP Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 14ns,13ns 0.8V,2.4V 1.2A,1.2A
MIC4468YN
Microchip Technology
Enquête
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MOQ: 25  MPQ: 1
IC DRIVER MOSFET QUAD 1.2A 14DIP
Tube - 4.5 V ~ 18 V -40°C ~ 85°C (TA) 14-DIP (0.300",7.62mm) 14-DIP Non-Inverting Independent Low-Side 4 N-Channel,P-Channel MOSFET - 14ns,13ns 0.8V,2.4V 1.2A,1.2A
RT7028AGN
Richtek USA Inc.
Enquête
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MOQ: 0  MPQ: 1
IC HI-SIDE MOSFET SWITCH DIP8
Tube - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-DIP (0.300",7.62mm) 8-DIP Non-Inverting Independent High-Side or Low-Side 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA
RT7028BGN
Richtek USA Inc.
Enquête
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MOQ: 0  MPQ: 1
IC HI-SIDE MOSFET SWITCH DIP8
Tube - 10 V ~ 20 V -40°C ~ 125°C (TA) 8-DIP (0.300",7.62mm) 8-DIP Non-Inverting Independent High-Side or Low-Side 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA
RT7021AGN
Richtek USA Inc.
Enquête
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MOQ: 0  MPQ: 1
IC HI-SIDE MOSFET SWITCH DIP8
Tube - 13 V ~ 20 V -40°C ~ 125°C (TA) 8-DIP (0.300",7.62mm) 8-DIP Non-Inverting Independent High-Side or Low-Side 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA
RT7021BGN
Richtek USA Inc.
Enquête
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MOQ: 0  MPQ: 1
IC HI-SIDE MOSFET SWITCH DIP8
Tube - 13 V ~ 20 V -40°C ~ 125°C (TA) 8-DIP (0.300",7.62mm) 8-DIP Non-Inverting Independent High-Side or Low-Side 2 IGBT,N-Channel MOSFET 600V 70ns,35ns 0.8V,2.5V 300mA,600mA
VLA531-01R
Powerex Inc.
Enquête
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MOQ: 25  MPQ: 1
IC IGBT DRIVER
Bulk - - - 14-SIP Module,12 Leads - - - - - - - - - -
IXBF14N250
IXYS
Enquête
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MOQ: 25  MPQ: 1
IC DRIVER ISOPLUS I4-PAC
Tube - - - i4-Pac?-5 (3 leads) ISOPLUS i4-PAC? - - - - - - - - -
IX2B11P7
IXYS
Enquête
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MOQ: 275  MPQ: 1
IC DRVR HALF BRIDGE GATE 14DIP
Tube - - - 14-DIP (0.300",7.62mm) 14-DIP - - - - - - - - -
IX2D11P7
IXYS
Enquête
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MOQ: 275  MPQ: 1
IC DRVR HALF BRIDGE GATE 14DIP
Tube - - - 14-DIP (0.300",7.62mm) 14-DIP - - - - - - - - -
MAX4428MJA/883B
Maxim Integrated
Enquête
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MOQ: 0  MPQ: 1
IC MOSFET DRVR COTS
Tube Military,MIL-STD-883 4.5 V ~ 18 V -55°C ~ 125°C (TA) 8-CDIP (0.300",7.62mm) 8-CERDIP Inverting,Non-Inverting Independent Low-Side 2 N-Channel,P-Channel MOSFET - 20ns,20ns 0.8V,2.4V 1.5A,1.5A