- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 782
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
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IC DRIVER MOSFET 12A HS TO-220-5
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | TO-220-5 | TO-220-5 | Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 20ns,24ns | 0.8V,2.4V | 12A,12A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 450 MPQ: 1
|
IC DRIVER MOSFET 12A HS 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 20ns,24ns | 0.8V,2.4V | 12A,12A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 275 MPQ: 1
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IC DRIVER MOSF QUAD 1.2A 14-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 14-DIP (0.300",7.62mm) | 14-DIP | Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 14ns,13ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
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IC DRIVER MOSF QUAD 1.2A 14-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 14-DIP (0.300",7.62mm) | 14-DIP | Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 14ns,13ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 275 MPQ: 1
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IC DRIVER MOSF QUAD 1.2A 14-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 14-DIP (0.300",7.62mm) | 14-DIP | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 14ns,13ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
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IC DRIVER MOSF QUAD 1.2A 14-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 14-DIP (0.300",7.62mm) | 14-DIP | Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 14ns,13ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
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IC DRIVER MOSF QUAD 1.2A 14-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 14-DIP (0.300",7.62mm) | 14-DIP | Inverting,Non-Inverting | Independent | Low-Side | 4 | N-Channel,P-Channel MOSFET | - | 14ns,13ns | 0.8V,2.4V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
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IC DRIVER MOSF HI/LOW SIDE 8-DIP
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Tube | - | 4.75 V ~ 32 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 2V,4.5V | - | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 1020 MPQ: 1
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IC MOSFET DVR 1.2A DUAL HS 8DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 85°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 35ns,25ns | 0.8V,3V | 1.2A,1.2A | ||||
Microchip Technology |
Enquête
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- |
-
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MOQ: 1020 MPQ: 1
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IC MOSFET DVR 1.2A DUAL HS 8DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 35ns,25ns | 0.8V,3V | 1.2A,1.2A | ||||
ON Semiconductor |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
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IC MOSFET DRIVER DUAL HS 8-DIP
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Tube | - | 6.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 31ns,32ns | 0.8V,2.6V | 1.5A,1.5A | ||||
IXYS |
Enquête
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- |
-
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MOQ: 25 MPQ: 1
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IC BRIDGE DRIVER FOR N-CH MOSFET
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Tube | - | 10 V ~ 35 V | -40°C ~ 125°C (TA) | 14-DIP (0.300",7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,17ns | 6V,9.6V | 6A,6A | ||||
IXYS |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
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IC DRVR HALF BRIDGE GATE 8DIP
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Tube | - | - | - | 8-DIP (0.300",7.62mm) | 8-PDIP | - | - | - | - | - | - | - | - | - | ||||
IXYS |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
|
IC DRVR HALF BRIDGE GATE 8DIP
|
Tube | - | - | - | 8-DIP (0.300",7.62mm) | 8-PDIP | - | - | - | - | - | - | - | - | - | ||||
IXYS |
Enquête
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- |
-
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MOQ: 275 MPQ: 1
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IC DRVR HALF BRIDGE 2A 14DIP
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Tube | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 500V | 8ns,7ns | 6V,9.6V | 2A,2A | ||||
IXYS |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC DRVR HALF BRIDGE 4A 14DIP
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Tube | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 650V | 23ns,22ns | 6V,7V | 4A,4A | ||||
IXYS |
Enquête
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- |
-
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MOQ: 375 MPQ: 1
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IC DRIVER HALF BRDG 600MA 14-PDI
|
Tube | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 650V | 23ns,22ns | 6V,7V | 600mA,600mA | ||||
IXYS |
Enquête
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- |
-
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MOQ: 450 MPQ: 1
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IC DRIVER HALF BRDG 600MA 8DIP
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Tube | - | - | - | 8-DIP (0.300",7.62mm) | 8-PDIP | - | - | - | - | - | - | - | - | - | ||||
IXYS |
Enquête
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- |
-
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MOQ: 450 MPQ: 1
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IC DRIVER HALF BRIDGE 8DIP
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Tube | - | - | - | 8-DIP (0.300",7.62mm) | 8-PDIP | - | - | - | - | - | - | - | - | - | ||||
IXYS |
Enquête
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- |
-
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MOQ: 400 MPQ: 1
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IC DRVR HALF BRIDGE 600MA 14-PDI
|
Tube | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300",7.62mm) | 14-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 28ns,18ns | 2.4V,2.7V | 600mA,600mA |