- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 782
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
Enquête
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MOQ: 87 MPQ: 1
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IC MOSFET DVR AND/INV 14CDIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 14-CDIP (0.300"，7.62mm) | 14-CERDIP | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
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-
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MOQ: 87 MPQ: 1
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IC MOSFET DVR QUAD NAND 14CDIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 14-CDIP (0.300"，7.62mm) | 14-CERDIP | Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
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MOQ: 87 MPQ: 1
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IC MOSFET DVR QUAD AND 14CDIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 14-CDIP (0.300"，7.62mm) | 14-CERDIP | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
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-
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MOQ: 112 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8CDIP
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Tube | - | 4.5 V ~ 18 V | -25°C ~ 85°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，30ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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-
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MOQ: 168 MPQ: 1
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IC MOSFET DRIVER 30V 1.5A 8-CDIP
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Tube | - | 4.5 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，33ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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-
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MOQ: 168 MPQ: 1
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IC MOSFET DRIVER 30V 1.5A 8-CDIP
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Tube | - | 4.5 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，33ns | 0.8V，2.4V | 1.5A，1.5A | |||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR LS 8A SGL 5TO-220
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Tube | - | 4.5 V ~ 25 V | -40°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 14ns，15ns | 0.8V，3.5V | 8A，8A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSFET DRV LS 14A SGL 5TO-220
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 0.8V，3.5V | 14A，14A | ||
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IXYS |
Enquête
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-
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MOQ: 25 MPQ: 1
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IC HIGH SIDE DRIVER 16DIP
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Tube | ISOSMART | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-DIP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | 1200V | 15ns，15ns | 1V，3.65V | 2A，2A | |||
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ON Semiconductor |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC DRIVER MOSFET DUAL HS 8DIP
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Tube | - | 6.1 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 36ns，32ns | 0.8V，2.6V | 1.5A，1.5A | |||
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ON Semiconductor |
Enquête
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MOQ: 300 MPQ: 1
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IC MOSFET DRIVER DUAL HS 8DIP
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Tube | - | 6.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 31ns，32ns | 0.8V，2.6V | 1.5A，1.5A | |||
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ON Semiconductor |
Enquête
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MOQ: 1000 MPQ: 1
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IC MOSFET DRIVER DUAL HS 8DIP
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Tube | - | 6.1 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 36ns，32ns | 0.8V，2.6V | 1.5A，1.5A | |||
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ON Semiconductor |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC DRIVER GATE SINGLE IGBT 8DIP
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Tube | - | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 17ns，17ns | 1.2V，3.2V | 1A，2A | |||
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ON Semiconductor |
Enquête
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MOQ: 100 MPQ: 1
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IC PREDRIVER IGBT IGNITION 8DIP
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Tube | - | 7 V ~ 10 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | - | - | - | |||
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Microchip Technology |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，30ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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MOQ: 600 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，30ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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MOQ: 660 MPQ: 1
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IC MOSFET DVR 1.2A DUAL HS 8DIP
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Tube | - | 4.5 V ~ 16 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
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Microchip Technology |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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MOQ: 750 MPQ: 1
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IC DRIVER MOSFET 6A LO SIDE 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 12ns，13ns | 0.8V，2.4V | 6A，6A |
