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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 782
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Linear Technology/Analog Devices |
Enquête
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MOQ: 250 MPQ: 1
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IC PWR MOSFET DRIVER N-CH 14-DIP
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Tube | - | 10 V ~ 15 V | 0°C ~ 125°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns，60ns | 0.8V，2V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC CMOS DRVR W/BOOST 1.5A 8-DIP
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Tube | - | 4 V ~ 6 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 33ns，27ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 180 MPQ: 1
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IC CMOS DRVR W/BOOST 1.5A 8-DIP
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Tube | - | 4 V ~ 6 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 33ns，27ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET QUAD 1.2A 14DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 225 MPQ: 1
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IC PWR MOSFET DRIVER N-CH 14-DIP
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Tube | - | 10 V ~ 15 V | -40°C ~ 125°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns，60ns | 0.8V，2V | 1.5A，1.5A | |||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 200 MPQ: 1
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IC MOSFET DVR HI-SIDE DUAL 8-DIP
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Tube | - | 9 V ~ 24 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | High-Side | 2 | N-Channel MOSFET | - | - | 0.8V，2V | - | |||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC GATE DRIVER LOW SIDE 5TO220
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Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC GATE DRIVER LOW SIDE 5TO220
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Tube | - | 12.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC GATE DRIVER LOW SIDE 5TO220
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Tube | - | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC GATE DRIVER LOW SIDE 5TO220
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Tube | - | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC GATE DRIVER LOW SIDE 5TO220
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Tube | - | 9 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 11ns，11ns | 0.8V，3.5V | 30A，30A | ||
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Linear Technology/Analog Devices |
Enquête
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- |
-
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MOQ: 150 MPQ: 1
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IC MOSFET DVR HI-SIDE QUAD 16DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | - | 0.8V，2V | - | |||
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Powerex Inc. |
Enquête
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- |
-
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MOQ: 32 MPQ: 1
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IC IGBT GATE DVR ISO 3A
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Bulk | - | 14 V ~ 15 V | -20°C ~ 70°C (TA) | 8-SIP Module，6 Leads | Module | Non-Inverting | Single | Low-Side | 1 | IGBT | - | 300ns，300ns | - | 3A，3A | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 112 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8CDIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC MOSFET DRIVER 6A INV 8CDIP
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Tube | - | 4.5 V ~ 18 V | -25°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | |||
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Powerex Inc. |
Enquête
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- |
-
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MOQ: 15 MPQ: 1
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IC IGBT GATE DVR ISO 5A
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Bulk | - | 14 V ~ 15 V | -20°C ~ 70°C (TA) | 8-SIP Module，6 Leads | Module | Non-Inverting | Single | Low-Side | 1 | IGBT | - | 300ns，300ns | - | 5A，5A | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC MOSFET DVR 3A DUAL HS 8-CDIP
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Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
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Powerex Inc. |
Enquête
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- |
-
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MOQ: 10 MPQ: 1
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ACCESSORY-GATE DRIVER
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- | - | 14 V ~ 17 V | -20°C ~ 85°C | 14-SIP Module，10 Leads | - | TTL | Single | Low-Side | 1 | IGBT | - | 300ns，300ns | - | - | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8CDIP
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Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 56 MPQ: 1
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IC CMOS DRVR W/BOOST 1.5A 8-CDIP
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Tube | - | 4 V ~ 6 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 33ns，27ns | 0.8V，2.4V | 1.5A，1.5A |
