- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 782
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
Enquête
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-
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MOQ: 480 MPQ: 1
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IC MOSFET DVR 3A HS INV 8DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | 3A，3A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 420 MPQ: 1
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IC MOSFET DVR .5A HS INV 8DIP
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Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 500mA，500mA | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 420 MPQ: 1
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IC MOSFET DRIVER 6A HS 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 420 MPQ: 1
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IC MOSFET DVR .5A HS 8DIP
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Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 500mA，500mA | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 480 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 480 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 420 MPQ: 1
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IC MOSFET DVR .5A HS 8DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 500mA，500mA | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 420 MPQ: 1
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IC MOSFET DVR .5A HS INV 8DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 500mA，500mA | |||
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Microchip Technology |
43
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 1.2A DUAL 8-DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
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Microchip Technology |
35
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 1.2A DUAL 8-DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 35ns，25ns | 0.8V，3V | 1.2A，1.2A | |||
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Microchip Technology |
15
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR HS 9A INV TO220-5
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 20ns，24ns | 0.8V，3V | 9A，9A | |||
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IXYS Integrated Circuits Division |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC GATE DVR 9A NON-INV TO220-5
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC GATE DVR 9A NON-INV TO220-5
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | TO-220-5 Formed Leads | TO-220-5 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 22ns，15ns | 0.8V，3V | 9A，9A | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 350 MPQ: 1
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IC MOSFET DVR HS 9A INV 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 20ns，24ns | 0.8V，3V | 9A，9A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 350 MPQ: 1
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IC MOSFET DVR HS 9A INV 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 20ns，24ns | 0.8V，3V | 9A，9A | |||
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Microchip Technology |
12
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 3A 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 14ns，17ns | 0.8V，2.4V | 3A，3A | |||
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Microchip Technology |
2
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 2A 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 12ns，15ns | 0.8V，2.4V | 2A，2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
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IC MOSFET DVR 3A DUAL HS 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
|
IC MOSFET DVR 3A DUAL HS 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 23ns，25ns | 0.8V，2.4V | 3A，3A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 300 MPQ: 1
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IC DRIVER MOSFET 9A LS TO220-5
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 20ns，24ns | 0.8V，3V | 9A，9A |
