- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 782
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
2,599
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 35ns，20ns | 0.7V，2.2V | 1A，1A | ||
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Infineon Technologies |
2,050
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 8DIP
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Tube | - | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Maxim Integrated |
259
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR DUAL NONINV 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Infineon Technologies |
1,189
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 200V | 10ns，15ns | 6V，9.5V | 3A，3A | ||
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Maxim Integrated |
200
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET SNGL 6A HS 8DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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Infineon Technologies |
195
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF BRIDGE 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Renesas Electronics America Inc. |
672
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER FET H-BRIDGE 16DIP
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Tube | - | 8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1V，2.5V | 1.4A，1.3A | ||
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Infineon Technologies |
1,460
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER FULL SELF OSC 14-DIP
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Tube | - | 10 V ~ 15.6 V | -25°C ~ 125°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | RC Input Circuit | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 600V | 120ns，50ns | 4.7V，9.3V | 180mA，260mA | ||
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Infineon Technologies |
1,792
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR HI/LO SIDE 14-DIP
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Maxim Integrated |
2,350
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRVR SGL 6A HS 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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Maxim Integrated |
1,523
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET DUAL 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
1,263
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER FET FULL BRIDGE 20DIP
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Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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Renesas Electronics America Inc. |
1,899
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER FET 3PHASE N-CH 24DIP
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Tube | - | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-DIP (0.300"，7.62mm) | 24-PDIP | Inverting，Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns，10ns | 1V，2.5V | 500mA，500mA | ||
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Infineon Technologies |
2,200
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER LIMITING 8-DIP
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Tube | - | 0 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 500V | 43ns，26ns | 0.8V，2.2V | 1.6A，3.3A | ||
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Texas Instruments |
657
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC HS MOSFET DRIVER 16-DIP
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Tube | - | 5 V ~ 40 V | 0°C ~ 70°C (TA) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 40ns，30ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Texas Instruments |
3,826
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC INVERTING MOSFET DRVR 8-DIP
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Tube | - | 5 V ~ 40 V | -55°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.2V | 1.5A，1.5A | ||
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Texas Instruments |
3,352
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC COMPLEMENT MOSFET DRVR 8-DIP
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Tube | - | 4.7 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 85ns，85ns | 0.8V，2V | 6A，6A | ||
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Infineon Technologies |
222
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER BRIDGE 3-PHASE 28-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 80ns，35ns | 0.8V，2.2V | 250mA，500mA | ||
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STMicroelectronics |
2,107
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HI/LO SIDE HV 8-DIP
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Tube | - | 17V (Max) | -45°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.5V，3.6V | 400mA，650mA | ||
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Infineon Technologies |
2,795
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 0.8V，2.3V | 60mA，130mA |
