- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 782
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Microchip Technology |
20
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8CDIP
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Tube | - | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，30ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
14
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET 1.5A DUAL 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，29ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
36
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSFET 6A LO SIDE 8DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 12ns，13ns | 0.8V，2.4V | 6A，6A | |||
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Microchip Technology |
22
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 2A 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 12ns，15ns | 0.8V，2.4V | 2A，2A | |||
|
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Microchip Technology |
1
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER MOSF QUAD 1.2A 14DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 14-DIP (0.300"，7.62mm) | 14-DIP | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Microchip Technology |
57
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 1.5A，1.5A | |||
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IXYS Integrated Circuits Division |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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3A DUAL NON-INVERTING LOW SIDE G
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- | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | CMOS/TTL | Independent | Low-Side | 2 | IGBT | - | 18ns，18ns | 0.8V，3V | 3A，3A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC DUAL MOSFET IGBT 8-DIP
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Tube | - | 6 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel MOSFET | - | 15ns，10ns | 0.8V，2.7V | 2.3A，3.3A | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 660 MPQ: 1
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IC MOSFET DVR 1A HS INV 8DIP
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Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 1A，1A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
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IC MOSFET DVR 1A HS INV 8DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 1A，1A | |||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC HALF BRIDGE SELF OSC 8-DIP
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Tube | - | 10 V ~ 15.6 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 600V | 80ns，45ns | - | 180mA，260mA | ||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
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IC MOSFET DVR 1A HS N-INV 8DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 1A，1A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 1A HS INV 8DIP
|
Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2V | 1A，1A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
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IC MOSFET DVR 2A HS 8DIP
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Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | 2A，2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
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IC MOSFET DVR 2A HS INV 8DIP
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Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | 2A，2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 2A HS 8DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | 2A，2A | |||
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Microchip Technology |
Enquête
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- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 2A HS INV 8DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 18ns，18ns | 0.8V，2V | 2A，2A | |||
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Microchip Technology |
Enquête
|
- |
-
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MOQ: 540 MPQ: 1
|
IC MOSFET DVR 3A HS INV 8DIP
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Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | 3A，3A |
