- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 782
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Microchip Technology |
290
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 15ns,18ns | 0.8V,2.4V | 4.5A,4.5A | ||||
Microchip Technology |
26
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 3A 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
300
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 2A 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting,Non-Inverting | Independent | Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | - | 12ns,15ns | 0.8V,2.4V | 2A,2A | ||||
Microchip Technology |
350
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | IGBT,N-Channel MOSFET | - | 20ns,24ns | 0.8V,2.4V | 9A,9A | ||||
Microchip Technology |
178
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 6A LS TO-220-5
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 12ns,13ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
104
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 3A DUAL 8DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 28ns,32ns | 0.8V,2.4V | 3A,3A | ||||
Microchip Technology |
350
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 9A LS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 20ns,24ns | 0.8V,3V | 9A,9A | ||||
Microchip Technology |
75
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 9A INV TO220-5
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Inverting | Single | Low-Side | 1 | IGBT,N-Channel,P-Channel MOSFET | - | 60ns,60ns | 0.8V,2.4V | 9A,9A | ||||
Linear Technology/Analog Devices |
42
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI-SIDE DUAL 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Independent | High-Side | 2 | N-Channel MOSFET | - | - | 0.8V,2V | - | ||||
Microchip Technology |
35
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
Tube | - | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300",7.62mm) | 8-CERDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 30ns,30ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
56
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A INV 8CDIP
|
Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300",7.62mm) | 8-CERDIP | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
152
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1A HS 8DIP
|
Tube | - | 4.5 V ~ 16 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2V | 1A,1A | ||||
Microchip Technology |
599
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 19ns,19ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
526
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 30ns,30ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
457
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 19ns,19ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
270
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting,Non-Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
155
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 1.5A,1.5A | ||||
Microchip Technology |
282
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSFET 6A LS 8-DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 12ns,13ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
415
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8DIP
|
Tube | - | 7 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 23ns,25ns | 0.8V,2.4V | 6A,6A | ||||
Microchip Technology |
350
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300",7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel,P-Channel MOSFET | - | 25ns,25ns | 0.8V,2.4V | 6A,6A |