- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 782
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Linear Technology/Analog Devices |
524
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 1/2BRDG NCH 16DIP
|
Tube | - | 10 V ~ 15 V | 0°C ~ 125°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns，60ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
Linear Technology/Analog Devices |
400
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 1/2BRDG NCH 16DIP
|
Tube | - | 10 V ~ 15 V | -40°C ~ 125°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 60V | 130ns，60ns | 0.8V，2V | 1.5A，1.5A | |||
|
|
Linear Technology/Analog Devices |
321
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER N-CH QUAD 20DIP
|
Tube | - | 8 V ~ 48 V | -40°C ~ 150°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | - | 0.8V，2V | - | |||
|
|
Microchip Technology |
297
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4.5A，4.5A | |||
|
|
Microchip Technology |
233
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 12A HS 8DIP
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 30ns，32ns | 0.8V，2.4V | 13A，13A | |||
|
|
Microchip Technology |
206
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 14-DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 14-DIP (0.300"，7.62mm) | 14-DIP | Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
195
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRIVER MOSF QUAD 1.2A 14-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 14-DIP (0.300"，7.62mm) | 14-DIP | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 14ns，13ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
178
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC CMOS DRVR W/BOOST 1.5A 8-DIP
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Tube | - | 4 V ~ 6 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 33ns，27ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
267
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 4.5A DUAL 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 15ns，18ns | 0.8V，2.4V | 4.5A，4.5A | |||
|
|
Microchip Technology |
169
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 12A HS TO220-5
|
Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 30ns，32ns | 0.8V，2.4V | 13A，13A | |||
|
|
Microchip Technology |
145
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 30V 1.5A 8DIP
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Tube | - | 4.5 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，33ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
287
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 9A INV 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 60ns，60ns | 0.8V，2.4V | 9A，9A | |||
|
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Microchip Technology |
218
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRVR 9A N-INV TO220-5
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | TO-220-5 | TO-220-5 | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 60ns，60ns | 0.8V，2.4V | 9A，9A | |||
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Microchip Technology |
217
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR AND/INV 14DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
|
|
Microchip Technology |
146
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR QUAD NAND 14DIP
|
Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-PDIP | Inverting | Independent | Low-Side | 4 | N-Channel，P-Channel MOSFET | - | 15ns，15ns | 0.8V，2.4V | 1.2A，1.2A | |||
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Linear Technology/Analog Devices |
537
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR HI-SIDE TRPL 8-DIP
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Tube | - | 1.8 V ~ 6 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | High-Side | 3 | N-Channel MOSFET | - | - | - | - | |||
|
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Microchip Technology |
112
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
Tube | - | 4.5 V ~ 18 V | -25°C ~ 85°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，30ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
542
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR 1.5A DUAL HS 8CDIP
|
Tube | - | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
|
|
Microchip Technology |
112
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER 6A HS 8CDIP
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Tube | - | 4.5 V ~ 18 V | -25°C ~ 150°C (TJ) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | |||
|
|
Maxim Integrated |
107
|
3 jours |
-
|
MOQ: 1 MPQ: 1
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IC MOSFET DRVR COTS
|
Tube | Military，MIL-STD-883 | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A |
