- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 782
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC COMPLEMENT SW FET DRVR 8-DIP
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Tube | - | 7 V ~ 20 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 52 MPQ: 1
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IC DRIVER BRIDGE 3-PHASE 28-DIP
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Tube | - | 10 V ~ 20 V | 125°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 90ns，40ns | 0.8V，2.2V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 104 MPQ: 1
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IC DRIVER BRIDGE 3-PHASE 28-DIP
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Tube | - | 11.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting，Non-Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，3V | 200mA，350mA | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC GATE DRIVER HI LO SIDE 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 60ns，30ns | 0.8V，2.5V | 350mA，650mA | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
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IC DRVR MOSFET DUAL-CH 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 600 MPQ: 1
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IC DRVR MOSFET DUAL-CH 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Powerex Inc. |
Enquête
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- |
-
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MOQ: 16 MPQ: 1
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IC IGBT GATE DRIVER INV/AC SERVO
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Bulk | - | 14 V ~ 15 V | -20°C ~ 60°C (TA) | 12-SIP | Module | Non-Inverting | Single | Low-Side | 1 | IGBT | - | 300ns，300ns | - | 5A，5A | ||
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Powerex Inc. |
Enquête
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- |
-
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MOQ: 21 MPQ: 1
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IC IGBT GATE DVR ISO 3A
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Bulk | - | 14 V ~ 15 V | -20°C ~ 60°C (TA) | 14-SIP Module，12 Leads | Module | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 300ns，300ns | - | 3A，3A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 1500 MPQ: 1
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IC GATE DVR MONO HI/LO 14DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，20ns | 4.5V，9.5V | 3A，3A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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IC DVR MOSFET DUAL-CH 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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IC DVR MOSFET DUAL-CH 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 17000 MPQ: 1
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IC DRIVER HALF BRIDGE DIP-8
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | - | 125mA，250mA | ||
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Vishay Siliconix |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
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IC MOSFET DVR ADAPTIVE PWR 8DIP
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Tube | - | 10.8 V ~ 16.5 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | 500V | 50ns，35ns | - | 1A，1A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 36 MPQ: 1
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IC DRIVER QUAD HI SIDE 20-DIP
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Tube | - | 7 V ~ 28 V | -25°C ~ 150°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-DIP | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | - | 0.8V，2V | 3A，3A | ||
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Powerex Inc. |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC IGBT GATE DVR ISO 5A
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Bulk | - | 14.2 V ~ 15.8 V | -25°C ~ 70°C (TA) | 30-SIP Module，21 Leads | Module | Inverting，Non-Inverting | Single | Low-Side | 1 | IGBT | - | 600ns，300ns | - | - | ||
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Powerex Inc. |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC IGBT GATE DVR ISO 5A
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Bulk | - | 14 V ~ 15 V | -20°C ~ 70°C (TA) | 8-SIP Module，5 Leads | Module | Non-Inverting | Single | Low-Side | 1 | IGBT | - | 300ns，300ns | - | 5A，5A | ||
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Microchip Technology |
1,021
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 1.5A DUAL HS 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 19ns，19ns | 0.8V，2.4V | 1.5A，1.5A | |||
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Microchip Technology |
1,151
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DRIVER 6A HS 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | |||
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ON Semiconductor |
1,622
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC DRIVER GATE SINGLE IGBT 8DIP
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Tube | - | 11 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 17ns，17ns | 1.2V，3.2V | 1A，2A | |||
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Microchip Technology |
743
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC MOSFET DVR 9A NON-INV 8DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 38ns，33ns | 0.8V，2.4V | 10A，10A |
