- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 782
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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STMicroelectronics |
Enquête
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MOQ: 2000 MPQ: 1
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IC DRVR HALF BRIDGE HV 8MINIDIP
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Tube | - | 14.6 V ~ 16.6 V | -45°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-Mini DIP | Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.5V，3.6V | 400mA，650mA | ||
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STMicroelectronics |
Enquête
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MOQ: 1000 MPQ: 1
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IC DRIVER HI/LO SIDE HV 14-DIP
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Tube | - | 17V (Max) | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.5V，3.6V | 400mA，650mA | ||
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STMicroelectronics |
Enquête
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MOQ: 2000 MPQ: 1
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IC DRIVER HI/LO SIDE HV 8MINIDIP
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Tube | - | 17V (Max) | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-Mini DIP | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 70ns，40ns | 1.1V，1.8V | 400mA，650mA | ||
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STMicroelectronics |
Enquête
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MOQ: 2000 MPQ: 1
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IC IGBT/MOSFET DRIVER ADV 8-DIP
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Tube | - | 12 V ~ 26 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | - | 100ns，100ns (Max) | 0.8V，4.2V | 1.3A，1.7A | ||
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Renesas Electronics America Inc. |
Enquête
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MOQ: 600 MPQ: 1
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IC PIN DRIVER 40MHZ 3ST 8-DIP
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Tube | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
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IXYS |
Enquête
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- |
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MOQ: 50 MPQ: 1
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IC MOSF DRIVER FAST DUAL 8-DIP
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSF DRVR FAST DUAL INV 8-DIP
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSF DRIVER FAST DUAL 8-DIP
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 7.5ns，6.5ns | 0.8V，3V | 2A，2A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC DRIVER GATE HALF BRIDGE 8-DIP
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Tube | - | 15 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.2V，2.9V | 350mA，650mA | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 800 MPQ: 1
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IC PIN DRIVER 10MHZ 8-DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | - | 4ns，4ns | 0.6V，2.4V | 4A，4A | ||
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IXYS |
Enquête
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- |
-
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MOQ: 500 MPQ: 1
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IC DRVR HALF BRIDGE 600MA 8DIP
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Tube | - | 10 V ~ 35 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 28ns，18ns | 2.4V，2.7V | 600mA，600mA | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC MOSFET DRVR 9A LOSIDE 8-DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，3.5V | 9A，9A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC GATE DRIVER 4A 8-DIP
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC GATE DRIVER 9A 8-DIP
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，23ns | 0.8V，2.4V | 9A，9A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC GATE DRIVER 14A 8-DIP
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 1V，2.5V | 14A，14A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC GATE DRIVER 4A 8-DIP
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A | ||
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IXYS |
Enquête
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-
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MOQ: 50 MPQ: 1
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IC GATE DRIVER 9A 8-DIP
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，23ns | 0.8V，2.4V | 9A，9A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC GATE DRIVER 14A 8-DIP
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 1V，2.5V | 14A，14A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC MOSFET DRIVER DUAL 2A 8-DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 8ns，8ns | 0.8V，3V | 2A，2A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC GATE DRIVER 4A 8-DIP
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Tube | - | 4.5 V ~ 30 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 9ns，8ns | 0.8V，3V | 4A，4A |
