- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 782
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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STMicroelectronics |
Enquête
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MOQ: 2000 MPQ: 1
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IC DRVR HALF BRDG HV W/OSC 8DIP
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Tube | - | 10 V ~ 16.6 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-Mini DIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | - | - | 170mA，270mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 1300 MPQ: 1
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IC DRIVER 3PHASE 600V 28DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-DIP (0.600"，15.24mm) | 28-PDIP | Inverting | 3-Phase | Half-Bridge | 6 | IGBT，N-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 175 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 14DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | 14-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 150 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 16DIP
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | 16-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 150 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 14-DIP
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | 16-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 17000 MPQ: 1
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IC DRIVER HALF BRIDGE OSC 8DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，45ns | - | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 175 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 16DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm)，14 Leads | 16-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 6V，9.5V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 125 MPQ: 1
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IC MOSFET DRVR HI/LO SIDE 14DIP
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | 14-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC DRIVER HI SIDE 3PHASE 16DIP
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Tube | - | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Inverting | 3-Phase | High-Side | 3 | N-Channel MOSFET | 95V | 35ns，30ns | 1V，2.5V | - | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC MONO PIN DVR HS 8DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT，N-Channel MOSFET | - | 4ns，4ns | 0.6V，2.4V | 4A，4A | ||
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Renesas Electronics America Inc. |
Enquête
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MOQ: 600 MPQ: 1
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IC DVR PIN 40MHZ 3STATE 8DIP
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Tube | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | High-Side or Low-Side | 2 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
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Renesas Electronics America Inc. |
Enquête
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MOQ: 600 MPQ: 1
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IC DVR PIN 40MHZ 3STATE 8DIP
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Tube | - | 4.5 V ~ 16.5 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT | - | 14.5ns，15ns | 0.8V，2.4V | 3.5A，3.5A | ||
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Renesas Electronics America Inc. |
Enquête
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MOQ: 600 MPQ: 1
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IC DVR HS DUAL MOSFET 8DIP
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Tube | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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MOQ: 600 MPQ: 1
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IC DVR HS DUAL MOSFET 8DIP
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Tube | - | 4.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 7.5ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC DVR HS DUAL MOSFET 8DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 600 MPQ: 1
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IC DVR HS DUAL MOSFET 8DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 125°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 10ns，10ns | 0.8V，2.4V | 2A，2A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 1000 MPQ: 1
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IC DRIVER 300MA 3-PHASE 16DIP
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Tube | - | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Inverting | 3-Phase | High-Side | 3 | N-Channel MOSFET | 95V | 35ns，30ns | 1V，2.5V | - | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 300 MPQ: 1
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IC DRIVER 3-PHASE FET 24DIP
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Tube | - | 7 V ~ 15 V | -40°C ~ 150°C (TJ) | 24-DIP (0.300"，7.62mm) | 24-PDIP | Inverting，Non-Inverting | 3-Phase | Half-Bridge | 6 | N-Channel MOSFET | 95V | 20ns，10ns | 1V，2.5V | 500mA，500mA | ||
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Microchip Technology |
Enquête
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MOQ: 2800 MPQ: 1
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IC PWM HIGH-SIDE SWITCH 8-DIP
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Tube | - | 25V (Max) | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | - | - | ||
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Microchip Technology |
Enquête
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MOQ: 105 MPQ: 1
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IC DRIVER 80V 8CH ADDRESS 18-DIP
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Tube | - | 4.5 V ~ 16 V | -40°C ~ 150°C (TJ) | 18-DIP (0.300"，7.62mm) | 18-DIP | Non-Inverting | Synchronous | Low-Side | 8 | N-Channel MOSFET | - | - | 0.8V，2V | - |
