- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 782
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Maxim Integrated |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC DRIVER DUAL MOSFET 1.5A 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DVR QUAD HISIDE MOSFET 18-DIP
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Tube | - | 4.5 V ~ 16.5 V | 0°C ~ 70°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | - | ||
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Maxim Integrated |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC DVR QUAD HISIDE MOSFET 18-DIP
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Tube | - | 4.5 V ~ 16.5 V | -40°C ~ 85°C (TA) | 18-DIP (0.300"，7.62mm) | 18-PDIP | Non-Inverting | Independent | High-Side | 4 | N-Channel MOSFET | - | 1.7μs，2.5μs | 0.8V，2.4V | - | ||
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Maxim Integrated |
Enquête
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-
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MOQ: 0 MPQ: 1
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IC DVR DUAL-POWER MOSFET 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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Maxim Integrated |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
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IC DVR DUAL-POWER MOSFET 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 25ns，20ns | 0.8V，2.4V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 250 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8-DIP
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Tube | - | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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Tube | - | 5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 130ns，50ns | 0.8V，2.9V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 300 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 200ns，100ns | 0.8V，2.3V | 60mA，130mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 160 MPQ: 1
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IC POWER MODULE 1.6A 500V 11-SIP
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Tube | iMOTION | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 11-SIP，9 Leads | 11-SIP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 500V | - | 0.8V，2.9V | - | ||
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Microchip Technology |
Enquête
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-
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MOQ: 2800 MPQ: 1
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IC PWM HIGH-SIDE SWITCH 8-DIP
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Tube | - | 25V (Max) | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-DIP | Non-Inverting | Single | High-Side | 1 | N-Channel MOSFET | - | - | - | - | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 250 MPQ: 1
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HI/LO SIDE DRVR 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 200V | 35ns，20ns | 0.7V，2.2V | 1A，1A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 720 MPQ: 1
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IC DRIVER FULL-BRIDGE 20-DIP
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Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Non-Inverting | Synchronous | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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Renesas Electronics America Inc. |
Enquête
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-
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MOQ: 720 MPQ: 1
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IC DRIVER FULL-BRIDGE 20-DIP
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Tube | - | 9.5 V ~ 15 V | -40°C ~ 125°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-PDIP | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 10ns，10ns | 1V，2.5V | 2.6A，2.4A | ||
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Renesas Electronics America Inc. |
Enquête
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MOQ: 500 MPQ: 1
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IC DRIVER H-BRIDGE 16-DIP
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Tube | - | 8.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-PDIP | Non-Inverting | Independent | Half-Bridge | 4 | N-Channel MOSFET | 95V | 9ns，9ns | 1V，2.5V | 1.4A，1.3A | ||
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STMicroelectronics |
Enquête
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-
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MOQ: 2000 MPQ: 1
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IC DRIVER HI/LO SIDE HV 8MINIDIP
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Tube | - | 17V (Max) | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-Mini DIP | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 50ns，30ns | 1.5V，3.6V | 400mA，650mA | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 125 MPQ: 1
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IC DRIVER HIGH/LOW SID 14DIP
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Tube | - | 3.3 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm)，13 Leads | 14-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 500V | 25ns，17ns | 6V，9.5V | 2A，2A | ||
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Microchip Technology |
Enquête
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-
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MOQ: 550 MPQ: 1
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IC DRIVER MOSFET HI/LO SIDE 8DIP
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Tube | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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Microchip Technology |
Enquête
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-
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MOQ: 25 MPQ: 1
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IC DRIVER MOSF DUAL HI/LOW 14DIP
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Tube | - | 2.75 V ~ 30 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | High-Side or Low-Side | 2 | N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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Microchip Technology |
Enquête
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-
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MOQ: 500 MPQ: 1
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IC DRIVER MOSFET HI SIDE HS 8DIP
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Tube | - | 12 V ~ 36 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | - | 400ns，400ns | 0.8V，2V | - | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 240 MPQ: 1
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PWR MOD 180W GATE DRIVER 11-SIP
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Tube | iMOTION | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 11-SIP，9 Leads | 11-SIP | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 500V | - | 0.8V，2.9V | - |
