- Packaging：
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- Operating Temperature：
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- Supplier Device Package：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 782
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
Enquête
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MOQ: 200 MPQ: 1
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IC COMPLEMENT SW FET DRVR 8-DIP
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Tube | - | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
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Texas Instruments |
Enquête
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MOQ: 200 MPQ: 1
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IC COMPLEMENT SW FET DRVR 8-DIP
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Tube | - | 7 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 30ns，25ns | 0.8V，2V | 500mA，1A | ||
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Infineon Technologies |
Enquête
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MOQ: 200 MPQ: 1
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IC DRIVER HALF-BRIDGE 14-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Microchip Technology |
Enquête
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MOQ: 56 MPQ: 1
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IC MOSFET DVR 1.5A DUAL OD 8CDIP
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Tube | - | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 40ns，40ns (Max) | 0.8V，2.4V | 1.5A，1.5A | ||
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Microchip Technology |
Enquête
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MOQ: 56 MPQ: 1
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IC MOSFET DVR 1.5A DUAL OD 8CDIP
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Tube | - | 4.5 V ~ 18 V | -55°C ~ 125°C (TA) | 8-CDIP (0.300"，7.62mm) | 8-CERDIP | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 40ns，40ns (Max) | 0.8V，2.4V | 1.5A，1.5A | ||
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Infineon Technologies |
Enquête
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MOQ: 18 MPQ: 1
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IC DRIVER SYNC 5V 2A 20-DIP
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Tube | - | 4 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-DIP | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel MOSFET | - | 20ns，20ns | - | 2A，2A | ||
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Infineon Technologies |
Enquête
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MOQ: 18 MPQ: 1
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IC DRIVER SYNC 5V 4A 20-DIP
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Tube | - | 4 V ~ 5.25 V | -40°C ~ 150°C (TJ) | 20-DIP (0.300"，7.62mm) | 20-DIP | Non-Inverting | Single | Low-Side | 1 | N-Channel MOSFET | - | 20ns，20ns | - | 4A，4A | ||
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Infineon Technologies |
Enquête
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-
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MOQ: 250 MPQ: 1
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IC DRIVER 600V 200/420MA 8-DIP
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Tube | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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Infineon Technologies |
Enquête
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MOQ: 250 MPQ: 1
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IC DRIVER HI/LOW 600V 1.9A 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
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MOQ: 200 MPQ: 1
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IC DRIVER HI/LOW 600V 1.9A 14DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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Infineon Technologies |
Enquête
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MOQ: 250 MPQ: 1
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IC DRIVER HALF BRIDGE 600V 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 40ns，20ns | 0.8V，2.7V | 1.9A，2.3A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC MOSFET DRIVER LS 4A DUAL 8DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC MOSFET DRIVER LS 14A SGL 8DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | IGBT，N-Channel，P-Channel MOSFET | - | 25ns，22ns | 0.8V，3.5V | 14A，14A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC MOSFET DRIVER LS 4A DUAL 8DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC MOSFET DRIVER LS 4A DUAL 8DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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IXYS |
Enquête
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MOQ: 50 MPQ: 1
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IC MOSFET DRIVER LS 4A DUAL 8DIP
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Tube | - | 4.5 V ~ 35 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | - | 16ns，13ns | 0.8V，2.5V | 4A，4A | ||
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Maxim Integrated |
Enquête
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MOQ: 0 MPQ: 1
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IC MOSFET DVR DUAL PWR 8-DIP
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Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Maxim Integrated |
Enquête
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MOQ: 0 MPQ: 1
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IC DRIVER MOSFET DUAL PWR 8-DIP
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Tube | - | 4.5 V ~ 17 V | 0°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 20ns，20ns | 0.8V，2V | - | ||
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Maxim Integrated |
Enquête
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MOQ: 0 MPQ: 1
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IC DRIVER MOSFET 6A HS 8-DIP
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Tube | - | 4.5 V ~ 18 V | -40°C ~ 85°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 25ns，25ns | 0.8V，2.4V | 6A，6A | ||
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Maxim Integrated |
Enquête
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MOQ: 0 MPQ: 1
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IC DRIVER DUAL MOSFET 1.5A 8-DIP
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Tube | - | 4.5 V ~ 18 V | 0°C ~ 70°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 0.8V，2.4V | 1.5A，1.5A |
