Number of Drivers:
Rise / Fall Time (Typ):
Découvrez les produits 782
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
IR2153
Infineon Technologies
Enquête
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MOQ: 200  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8-DIP
Tube - 10 V ~ 15.6 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP RC Input Circuit Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,40ns - -
IR2102
Infineon Technologies
Enquête
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-
MOQ: 250  MPQ: 1
IC DRIVER HIGH/LOW SIDE 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,3V 210mA,360mA
IR2103
Infineon Technologies
Enquête
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MOQ: 300  MPQ: 1
IC DRIVER HALF BRIDGE 600V 8DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Inverting,Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 100ns,50ns 0.8V,3V 210mA,360mA
IR21064
Infineon Technologies
Enquête
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MOQ: 250  MPQ: 1
IC DRIVER HIGH/LOW DRIVER 14-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 150ns,50ns 0.8V,2.9V 200mA,350mA
IR21074
Infineon Technologies
Enquête
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MOQ: 25  MPQ: 1
IC DRIVER HIGH/LOW DRIVER 14-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 150ns,50ns 0.8V,2.7V 200mA,350mA
98-0255
Infineon Technologies
Enquête
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MOQ: 225  MPQ: 1
IC DRIVER HIGH/LOW DRIVER 14-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 600V 150ns,50ns 0.8V,2.9V 200mA,350mA
IR2109
Infineon Technologies
Enquête
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MOQ: 250  MPQ: 1
IC DRIVER HALF-BRIDGE 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 150ns,50ns 0.8V,2.9V 200mA,350mA
IR21094
Infineon Technologies
Enquête
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MOQ: 250  MPQ: 1
IC DRIVER HALF-BRIDGE 14-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Non-Inverting Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 150ns,50ns 0.8V,2.9V 200mA,350mA
IR2110-1
Infineon Technologies
Enquête
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MOQ: 25  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14-DIP
Tube - 3.3 V ~ 20 V -40°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm),13 Leads 14-PDIP Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 500V 25ns,17ns 6V,9.5V 2A,2A
IR2118
Infineon Technologies
Enquête
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MOQ: 300  MPQ: 1
IC MOSFET DRIVER HIGH-SIDE 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 6V,9.5V 250mA,500mA
IR2121
Infineon Technologies
Enquête
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MOQ: 150  MPQ: 1
IC MOSFET DRIVER LOW-SIDE 8-DIP
Tube - 12 V ~ 18 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Non-Inverting Single Low-Side 1 IGBT,N-Channel MOSFET - 43ns,26ns 0.8V,2.2V 1.6A,3.3A
IR2122
Infineon Technologies
Enquête
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MOQ: 150  MPQ: 1
IC MOSFET DRIVER HIGH-SIDE 8-DIP
Tube - 13 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 250ns,250ns 0.8V,3V 130mA,130mA
IR2128
Infineon Technologies
Enquête
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MOQ: 250  MPQ: 1
IC MOSFET DRIVER CUR-SENSE 8-DIP
Tube - 12 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP Inverting Single High-Side or Low-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,3V 250mA,500mA
IR2131
Infineon Technologies
Enquête
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MOQ: 65  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Inverting Independent Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.2V 250mA,500mA
IR2132
Infineon Technologies
Enquête
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MOQ: 65  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 80ns,35ns 0.8V,2.2V 250mA,500mA
IR2135
Infineon Technologies
Enquête
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MOQ: 52  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-DIP
Tube - 10 V ~ 20 V 125°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 90ns,40ns 0.8V,2.2V 250mA,500mA
IR21362
Infineon Technologies
Enquête
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MOQ: 104  MPQ: 1
IC DRIVER BRIDGE 3-PHASE 28-DIP
Tube - 11.5 V ~ 20 V -40°C ~ 150°C (TJ) 28-DIP (0.600",15.24mm) 28-PDIP Inverting,Non-Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel MOSFET 600V 125ns,50ns 0.8V,3V 200mA,350mA
IR21531
Infineon Technologies
Enquête
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MOQ: 350  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8-DIP
Tube - 10 V ~ 15.6 V -40°C ~ 125°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP RC Input Circuit Synchronous Half-Bridge 2 N-Channel MOSFET 600V 80ns,45ns - -
IR2155
Infineon Technologies
Enquête
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MOQ: 200  MPQ: 1
IC DRVR HALF BRDG SELF-OSC 8-DIP
Tube - 10 V ~ 20 V -40°C ~ 150°C (TJ) 8-DIP (0.300",7.62mm) 8-PDIP RC Input Circuit Synchronous Half-Bridge 2 IGBT,N-Channel MOSFET 600V 80ns,45ns - 250mA,500mA
IR2213
Infineon Technologies
Enquête
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MOQ: 100  MPQ: 1
IC DRIVER HIGH/LOW SIDE 14-DIP
Tube - 12 V ~ 20 V -55°C ~ 150°C (TJ) 14-DIP (0.300",7.62mm) 14-DIP Non-Inverting Independent Half-Bridge 2 IGBT,N-Channel MOSFET 1200V 25ns,17ns 6V,9.5V 2A,2.5A