- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 782
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
Enquête
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-
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MOQ: 3000 MPQ: 1
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IC DRIVER HALF-BRIDGE 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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STMicroelectronics |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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IC DRVR HALF BRG HV OSC 8MINIDIP
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Tube | - | 10 V ~ 16.6 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-Mini DIP | RC Input Circuit | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | - | - | 170mA，270mA | ||
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STMicroelectronics |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC IGBT/MOS DRIVER TRPL 16-DIP
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Tube | - | 4 V ~ 16 V | -40°C ~ 150°C (TJ) | 16-DIP (0.300"，7.62mm) | 16-DIP | Inverting，Non-Inverting | Independent | Low-Side | 3 | IGBT，N-Channel MOSFET | - | - | 0.8V，2V | - | ||
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Texas Instruments |
Enquête
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-
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MOQ: 350 MPQ: 1
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IC MOSFET DRIVR DUAL HS 4A 8DIP
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Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 18000 MPQ: 1
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IC MOSFET DRVR CURR SENSE 8DIP
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Tube | - | 12 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Single | High-Side or Low-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，3V | 250mA，500mA | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 350 MPQ: 1
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IC MOSFET DRIVR DUAL HS 4A 8DIP
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Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 350 MPQ: 1
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IC MOSFET DRIVR DUAL HS 4A 8DIP
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Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 350 MPQ: 1
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IC MOSFET DRIVR DUAL HS 4A 8DIP
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Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 350 MPQ: 1
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IC MOSFET DRIVR DUAL HS 4A 8DIP
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Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 350 MPQ: 1
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IC MOSFET DRIVR DUAL HS 4A 8DIP
|
Tube | - | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 350 MPQ: 1
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IC DUAL HS POWER FET DRIVER 8DIP
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Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 350 MPQ: 1
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IC DUAL HS POWER FET DRIVER 8DIP
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Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 350 MPQ: 1
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IC DUAL HS PWR FET DRIVER 8DIP
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Tube | - | 4.5 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 350 MPQ: 1
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IC DUAL HS MOSFET DRVR 8-DIP
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Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting，Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1500 MPQ: 1
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IC DRIVER HALF-BRIDGE 14-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Inverting，Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Texas Instruments |
Enquête
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- |
-
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MOQ: 350 MPQ: 1
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IC DUAL HS MOSFET DRVR 8-DIP
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Tube | - | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 1500 MPQ: 1
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IC DRIVER HI/LO SIDE 600V 14-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 14-DIP (0.300"，7.62mm) | 14-DIP | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 75ns，35ns | 6V，9.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 18000 MPQ: 1
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IC DRIVER HIGH/LOW SIDE 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，50ns | 0.8V，3V | 210mA，360mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC DVR HALF BRIDGE 8-DIP
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Tube | - | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 100ns，35ns | 0.8V，2.5V | 290mA，600mA | ||
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Infineon Technologies |
Enquête
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- |
-
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MOQ: 3000 MPQ: 1
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IC DVR CURR SENSE 1CH 600V 8DIP
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Tube | - | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-DIP (0.300"，7.62mm) | 8-PDIP | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.5V | 290mA，600mA |
