- Packaging:
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- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Current - Peak Output (Source, Sink):
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- Conditions sélectionnées:
Découvrez les produits 361
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
Texas Instruments |
2,997
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HI/LO-SIDE DVR 3A 120V 8SOPWR
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 3V,8V | 3A,3A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Tape & Reel (TR) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-VDFN Exposed Pad | 10-VSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
Texas Instruments |
1,716
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Cut Tape (CT) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-VDFN Exposed Pad | 10-VSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
Texas Instruments |
1,716
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-VDFN Exposed Pad | 10-VSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 8ns,7ns | 0.8V,2.5V | 3A,3A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 4500 MPQ: 1
|
IC HALF-BRIDGE GATE DRVR 10WSON
|
Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 10-WDFN Exposed Pad | 10-WSON (4x4) | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 7ns,3.5ns | - | 1.2A,5A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8SO
|
Tape & Reel (TR) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.2V,2.55V | 4A,4A | ||||
Texas Instruments |
5,075
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8SO
|
Cut Tape (CT) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.2V,2.55V | 4A,4A | ||||
Texas Instruments |
5,075
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 4A 8SO
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | 120V | 7.2ns,5.5ns | 1.2V,2.55V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
AUTOMOTIVE,120-V BOOT,4-A PEAK
|
Tape & Reel (TR) | 7 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 7.8ns,6ns | 1.2V,2.55V | 4A,4A | ||||
Texas Instruments |
2,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
AUTOMOTIVE,120-V BOOT,4-A PEAK
|
Cut Tape (CT) | 7 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 7.8ns,6ns | 1.2V,2.55V | 4A,4A | ||||
Texas Instruments |
2,323
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
AUTOMOTIVE,120-V BOOT,4-A PEAK
|
- | 7 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154",3.90mm Width) | 8-SO PowerPad | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | N-Channel MOSFET | - | 7.8ns,6ns | 1.2V,2.55V | 4A,4A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC MOSFET DRIVER SYNC 8WSON
|
Tape & Reel (TR) | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 30ns,8ns | 0.6V,2.65V | - | ||||
Texas Instruments |
3,558
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER SYNC 8WSON
|
Cut Tape (CT) | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 30ns,8ns | 0.6V,2.65V | - | ||||
Texas Instruments |
3,558
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DRIVER SYNC 8WSON
|
- | 4.5 V ~ 5.5 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (2x2) | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 35V | 30ns,8ns | 0.6V,2.65V | - | ||||
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Tape & Reel (TR) | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 42ns,30ns | 0.8V,2V | 2A,4A | ||||
Maxim Integrated |
678
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
Cut Tape (CT) | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 42ns,30ns | 0.8V,2V | 2A,4A | ||||
Maxim Integrated |
678
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR 2CH 16NS 10TDFN
|
- | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 10-WFDFN Exposed Pad | 10-TDFN (3x3) | Surface Mount | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 42ns,30ns | 0.8V,2V | 2A,4A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8SOIC
|
Tape & Reel (TR) | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
2,474
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8SOIC
|
Cut Tape (CT) | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
2,474
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR CURRENT SENSE 1CH 8SOIC
|
- | 9 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 80ns,40ns | 0.8V,2.5V | 290mA,600mA |