Mounting Type:
Number of Drivers:
Découvrez les produits 361
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Input Type Channel Type Driven Configuration Number of Drivers Gate Type High Side Voltage - Max (Bootstrap) Rise / Fall Time (Typ) Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
UCC27200QDDARQ1
Texas Instruments
2,997
3 jours
-
MOQ: 1  MPQ: 1
IC HI/LO-SIDE DVR 3A 120V 8SOPWR
- 8 V ~ 17 V -40°C ~ 140°C (TJ) 8-PowerSOIC (0.154",3.90mm Width) 8-SO PowerPad Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 120V 8ns,7ns 3V,8V 3A,3A
UCC27201AQDMKRQ1
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR HIGH/LOW SIDE 3A 8SOPWR
Tape & Reel (TR) 8 V ~ 17 V -40°C ~ 140°C (TJ) 10-VDFN Exposed Pad 10-VSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 120V 8ns,7ns 0.8V,2.5V 3A,3A
UCC27201AQDMKRQ1
Texas Instruments
1,716
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HIGH/LOW SIDE 3A 8SOPWR
Cut Tape (CT) 8 V ~ 17 V -40°C ~ 140°C (TJ) 10-VDFN Exposed Pad 10-VSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 120V 8ns,7ns 0.8V,2.5V 3A,3A
UCC27201AQDMKRQ1
Texas Instruments
1,716
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HIGH/LOW SIDE 3A 8SOPWR
- 8 V ~ 17 V -40°C ~ 140°C (TJ) 10-VDFN Exposed Pad 10-VSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 120V 8ns,7ns 0.8V,2.5V 3A,3A
LM5113QDPRRQ1
Texas Instruments
Enquête
-
-
MOQ: 4500  MPQ: 1
IC HALF-BRIDGE GATE DRVR 10WSON
Tape & Reel (TR) 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 10-WDFN Exposed Pad 10-WSON (4x4) Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 100V 7ns,3.5ns - 1.2A,5A
UCC27211AQDDARQ1
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR HIGH/LOW SIDE 4A 8SO
Tape & Reel (TR) 8 V ~ 17 V -40°C ~ 140°C (TJ) 8-PowerSOIC (0.154",3.90mm Width) 8-SO PowerPad Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 120V 7.2ns,5.5ns 1.2V,2.55V 4A,4A
UCC27211AQDDARQ1
Texas Instruments
5,075
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HIGH/LOW SIDE 4A 8SO
Cut Tape (CT) 8 V ~ 17 V -40°C ~ 140°C (TJ) 8-PowerSOIC (0.154",3.90mm Width) 8-SO PowerPad Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 120V 7.2ns,5.5ns 1.2V,2.55V 4A,4A
UCC27211AQDDARQ1
Texas Instruments
5,075
3 jours
-
MOQ: 1  MPQ: 1
IC DVR HIGH/LOW SIDE 4A 8SO
- 8 V ~ 17 V -40°C ~ 140°C (TJ) 8-PowerSOIC (0.154",3.90mm Width) 8-SO PowerPad Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET 120V 7.2ns,5.5ns 1.2V,2.55V 4A,4A
UCC27212AQDDARQ1
Texas Instruments
Enquête
-
-
MOQ: 2500  MPQ: 1
AUTOMOTIVE,120-V BOOT,4-A PEAK
Tape & Reel (TR) 7 V ~ 17 V -40°C ~ 140°C (TJ) 8-PowerSOIC (0.154",3.90mm Width) 8-SO PowerPad Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET - 7.8ns,6ns 1.2V,2.55V 4A,4A
UCC27212AQDDARQ1
Texas Instruments
2,323
3 jours
-
MOQ: 1  MPQ: 1
AUTOMOTIVE,120-V BOOT,4-A PEAK
Cut Tape (CT) 7 V ~ 17 V -40°C ~ 140°C (TJ) 8-PowerSOIC (0.154",3.90mm Width) 8-SO PowerPad Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET - 7.8ns,6ns 1.2V,2.55V 4A,4A
UCC27212AQDDARQ1
Texas Instruments
2,323
3 jours
-
MOQ: 1  MPQ: 1
AUTOMOTIVE,120-V BOOT,4-A PEAK
- 7 V ~ 17 V -40°C ~ 140°C (TJ) 8-PowerSOIC (0.154",3.90mm Width) 8-SO PowerPad Surface Mount Non-Inverting Independent Half-Bridge 2 N-Channel MOSFET - 7.8ns,6ns 1.2V,2.55V 4A,4A
TPS51604QDSGRQ1
Texas Instruments
Enquête
-
-
MOQ: 3000  MPQ: 1
IC MOSFET DRIVER SYNC 8WSON
Tape & Reel (TR) 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-WFDFN Exposed Pad 8-WSON (2x2) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 35V 30ns,8ns 0.6V,2.65V -
TPS51604QDSGRQ1
Texas Instruments
3,558
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER SYNC 8WSON
Cut Tape (CT) 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-WFDFN Exposed Pad 8-WSON (2x2) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 35V 30ns,8ns 0.6V,2.65V -
TPS51604QDSGRQ1
Texas Instruments
3,558
3 jours
-
MOQ: 1  MPQ: 1
IC MOSFET DRIVER SYNC 8WSON
- 4.5 V ~ 5.5 V -40°C ~ 125°C (TJ) 8-WFDFN Exposed Pad 8-WSON (2x2) Surface Mount Non-Inverting Synchronous Half-Bridge 2 N-Channel MOSFET 35V 30ns,8ns 0.6V,2.65V -
MAX15025AATB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Tape & Reel (TR) 4.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN (3x3) Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 42ns,30ns 0.8V,2V 2A,4A
MAX15025AATB+T
Maxim Integrated
678
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
Cut Tape (CT) 4.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN (3x3) Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 42ns,30ns 0.8V,2V 2A,4A
MAX15025AATB+T
Maxim Integrated
678
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 2CH 16NS 10TDFN
- 4.5 V ~ 28 V -40°C ~ 150°C (TJ) 10-WFDFN Exposed Pad 10-TDFN (3x3) Surface Mount Non-Inverting Independent Low-Side 2 N-Channel MOSFET - 42ns,30ns 0.8V,2V 2A,4A
AUIRS21271STR
Infineon Technologies
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
Tape & Reel (TR) 9 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V 290mA,600mA
AUIRS21271STR
Infineon Technologies
2,474
3 jours
-
MOQ: 1  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
Cut Tape (CT) 9 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V 290mA,600mA
AUIRS21271STR
Infineon Technologies
2,474
3 jours
-
MOQ: 1  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
- 9 V ~ 20 V -40°C ~ 150°C (TJ) 8-SOIC (0.154",3.90mm Width) 8-SOIC Surface Mount Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 600V 80ns,40ns 0.8V,2.5V 290mA,600mA