- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 66
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
5,844
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI SIDE 8-SOIC
|
Tube | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 300V | 65ns，25ns | - | 450mA，450mA | ||
|
|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
1,052
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
1,052
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Single | Low-Side | 1 | IGBT，N-Channel MOSFET | - | 8ns，7ns | - | 4A，4A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
Tape & Reel (TR) | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
|
Texas Instruments |
2,562
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
Cut Tape (CT) | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
|
Texas Instruments |
2,562
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
- | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DRIVER HI SIDE 8-SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 15ns，10ns | - | 250mA，500mA | ||
|
|
|
ON Semiconductor |
2,208
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HI SIDE 8-SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 15ns，10ns | - | 250mA，500mA | ||
|
|
|
ON Semiconductor |
2,208
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER HI SIDE 8-SOIC
|
- | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 15ns，10ns | - | 250mA，500mA | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL 4A HS 8MSOP
|
Tape & Reel (TR) | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
|
Texas Instruments |
1,186
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL 4A HS 8MSOP
|
Cut Tape (CT) | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
|
Texas Instruments |
1,186
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL 4A HS 8MSOP
|
- | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR DUAL HS 8TSSOP
|
Tape & Reel (TR) | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
4,688
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 8TSSOP
|
Cut Tape (CT) | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
4,688
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 8TSSOP
|
- | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | Synchronous | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HI SIDE 8-SOIC
|
Tape & Reel (TR) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 300V | 65ns，25ns | - | 450mA，450mA | ||
|
|
|
ON Semiconductor |
2,271
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI SIDE 8-SOIC
|
Cut Tape (CT) | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 300V | 65ns，25ns | - | 450mA，450mA | ||
|
|
|
ON Semiconductor |
2,271
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI SIDE 8-SOIC
|
- | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 300V | 65ns，25ns | - | 450mA，450mA | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR 9A SGL HS 8SOIC
|
Tape & Reel (TR) | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Single | Low-Side | 1 | N-Channel，P-Channel MOSFET | - | 20ns，20ns | 1.1V，2.7V | 9A，9A |
