- Packaging：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 39
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Gate Type | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|
|
|
ON Semiconductor |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Tape & Reel (TR) | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | ||
|
|
|
ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Cut Tape (CT) | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | ||
|
|
|
ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
- | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8MSOP
|
Tape & Reel (TR) | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Texas Instruments |
5,315
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8MSOP
|
Cut Tape (CT) | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Texas Instruments |
5,315
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8MSOP
|
- | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8SOIC
|
Tape & Reel (TR) | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Texas Instruments |
2,474
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8SOIC
|
Cut Tape (CT) | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Texas Instruments |
2,474
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8SOIC
|
- | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOW SIDE DUAL 8SOIC
|
Tape & Reel (TR) | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 7ns，6ns | - | ||
|
|
|
Texas Instruments |
3,304
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE DUAL 8SOIC
|
Cut Tape (CT) | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 7ns，6ns | - | ||
|
|
|
Texas Instruments |
3,304
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE DUAL 8SOIC
|
- | -40°C ~ 140°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 7ns，6ns | - | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8MSOP
|
Tape & Reel (TR) | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Texas Instruments |
118
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8MSOP
|
Cut Tape (CT) | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
Texas Instruments |
118
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR 2CH LOW SIDE 8MSOP
|
- | -40°C ~ 140°C (TJ) | 8-TSSOP，8-MSOP (0.118"，3.00mm Width) Exposed Pad | 8-MSOP-PowerPad | Non-Inverting | Independent | IGBT，N-Channel MOSFET | 7ns，6ns | 1V，2.3V | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A TTL 8SOIC
|
Cut Tape (CT) | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A TTL 8SOIC
|
- | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | Independent | N-Channel MOSFET | 12ns，9ns | 0.8V，2V | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Cut Tape (CT) | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 12ns，9ns | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
- | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | N-Channel MOSFET | 12ns，9ns | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 4A 8-SOIC
|
Cut Tape (CT) | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | N-Channel MOSFET | 12ns，9ns | - |
