- Packaging：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Input Type：
-
- Channel Type：
-
- Gate Type：
-
- Rise / Fall Time (Typ)：
-
- Logic Voltage - VIL, VIH：
-
- Current - Peak Output (Source, Sink)：
-
- Conditions sélectionnées:
Découvrez les produits 15
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | 10 V ~ 32 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Texas Instruments |
4,192
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | 10 V ~ 32 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Texas Instruments |
4,192
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 10 V ~ 32 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 3000 MPQ: 1
|
IC IGBT GATE DRIVER SOT-23-6
|
Tape & Reel (TR) | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，1.7V | 2.5A，5A | ||
|
|
|
Texas Instruments |
3,139
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DRIVER SOT-23-6
|
Cut Tape (CT) | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，1.7V | 2.5A，5A | ||
|
|
|
Texas Instruments |
3,139
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGBT GATE DRIVER SOT-23-6
|
- | 10 V ~ 32 V | -40°C ~ 140°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | Single | 1 | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，1.7V | 2.5A，5A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
UCC27712QDRQ1
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | - | Synchronous | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
2,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
UCC27712QDRQ1
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | - | Synchronous | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
2,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
UCC27712QDRQ1
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | - | Synchronous | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER
|
Tube | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | - | Synchronous | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC BUFFER GATE DRVR 8SOIC
|
Tape & Reel (TR) | 13 V ~ 25 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Single | 1 | IGBT | - | 50ns，50ns | - | 10A，10A | ||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IGBT GATE DRIVER
|
Tape & Reel (TR) | 20V | -40°C ~ 125°C (TA) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | - | Synchronous | - | IGBT | - | 9.2ns，7.9ns | 0.75V，4.3V | 7.8A，6.8A | |||
|
|
ON Semiconductor |
2,107
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IGBT GATE DRIVER
|
Cut Tape (CT) | 20V | -40°C ~ 125°C (TA) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | - | Synchronous | - | IGBT | - | 9.2ns，7.9ns | 0.75V，4.3V | 7.8A，6.8A | |||
|
|
ON Semiconductor |
2,107
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IGBT GATE DRIVER
|
- | 20V | -40°C ~ 125°C (TA) | 16-SOIC (0.154"，3.90mm Width) | 16-SOIC | - | Synchronous | - | IGBT | - | 9.2ns，7.9ns | 0.75V，4.3V | 7.8A，6.8A | |||
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
HIGH SIDE AND LOW SIDE GA
|
Tape & Reel (TR) | 8 V ~ 16 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) Exposed Pad | 8-SOIC-EP | Non-Inverting | Synchronous | 2 | N-Channel MOSFET | 100V | 6ns，4ns | 2V，1.8V | 3A，6A |
