- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 7
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
Enquête
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- |
-
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MOQ: 1 MPQ: 1
|
AUTOMOTIVE 4-A，6-A，3.0-KV(RMS)
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Tube | 3 V ~ 5.5 V | -40°C ~ 150°C (TA) | CMOS/TTL | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | - | 5ns，6ns | 1.25V，1.6V | 4A，6A | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，15ns | 0.8V，2.5V | 3.5A，3.5A | ||
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
4A/6A 2KVRMS DUAL CH ISO DR 8V
|
Tape & Reel (TR) | 3 V ~ 5.5 V | -40°C ~ 150°C (TA) | CMOS/TTL | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | - | 5ns，6ns | 1.25V，1.6V | 4A，6A | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 180 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | Non-Inverting | Independent | Half-Bridge | 2 | IGBT，N-Channel MOSFET | 600V | 15ns，15ns | 0.8V，2.5V | 3.5A，3.5A | ||
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ON Semiconductor |
Enquête
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- |
-
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MOQ: 2500 MPQ: 1
|
IGBT GATE DRIVER
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Tape & Reel (TR) | 20V | -40°C ~ 125°C (TA) | - | Synchronous | High-Side or Low-Side | - | IGBT | - | 9.2ns，7.9ns | 0.75V，4.3V | 7.8A，6.8A | |||
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ON Semiconductor |
2,107
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IGBT GATE DRIVER
|
Cut Tape (CT) | 20V | -40°C ~ 125°C (TA) | - | Synchronous | High-Side or Low-Side | - | IGBT | - | 9.2ns，7.9ns | 0.75V，4.3V | 7.8A，6.8A | |||
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ON Semiconductor |
2,107
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IGBT GATE DRIVER
|
- | 20V | -40°C ~ 125°C (TA) | - | Synchronous | High-Side or Low-Side | - | IGBT | - | 9.2ns，7.9ns | 0.75V，4.3V | 7.8A，6.8A |
