- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 219
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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ON Semiconductor |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 5A，5A | ||
|
|
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ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 5A，5A | ||
|
|
|
ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 5A，5A | ||
|
|
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Tape & Reel (TR) | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Synchronous | Half-Bridge | N-Channel MOSFET | 100V | 40ns，20ns | - | 1A，1A | ||
|
|
|
Infineon Technologies |
4,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Cut Tape (CT) | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Synchronous | Half-Bridge | N-Channel MOSFET | 100V | 40ns，20ns | - | 1A，1A | ||
|
|
|
Infineon Technologies |
4,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
- | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Synchronous | Half-Bridge | N-Channel MOSFET | 100V | 40ns，20ns | - | 1A，1A | ||
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|
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Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
Tape & Reel (TR) | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
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|
|
Texas Instruments |
7,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
Cut Tape (CT) | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
|
Texas Instruments |
7,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
- | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
|
Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Tape & Reel (TR) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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|
|
Texas Instruments |
16,709
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Cut Tape (CT) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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|
|
Texas Instruments |
16,709
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | 3A，3A | ||
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|
|
ROHM Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
2CH HALF-BRIDGE GATE DRIVER
|
Tape & Reel (TR) | 3 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 24-VSSOP (0.220"，5.60mm Width) Exposed Pad | 24-HTSSOP-B | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | - | - | - | - | ||
|
|
|
ROHM Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
2CH HALF-BRIDGE GATE DRIVER
|
Cut Tape (CT) | 3 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 24-VSSOP (0.220"，5.60mm Width) Exposed Pad | 24-HTSSOP-B | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | - | - | - | - | ||
|
|
|
ROHM Semiconductor |
6,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
2CH HALF-BRIDGE GATE DRIVER
|
- | 3 V ~ 5.5 V | -40°C ~ 150°C (TJ) | 24-VSSOP (0.220"，5.60mm Width) Exposed Pad | 24-HTSSOP-B | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | - | - | - | - | ||
|
|
|
Renesas Electronics America Inc. |
250
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
|
Tape & Reel (TR) | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
379
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
|
Cut Tape (CT) | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
379
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
|
- | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
|
|
|
Renesas Electronics America Inc. |
965
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
|
Tube | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Non-Inverting | Synchronous | Half-Bridge | N-Channel MOSFET | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8WSON
|
Tape & Reel (TR) | 8 V ~ 14 V | -40°C ~ 125°C (TJ) | 8-WFDFN Exposed Pad | 8-WSON (4x4) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 108V | 15ns，15ns | 0.8V，2.2V | 1A，1A |
