- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 110
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Texas Instruments |
15,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，4A | ||
|
|
|
Texas Instruments |
18,812
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，4A | ||
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|
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Texas Instruments |
18,812
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH SOT23-5
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SC-74A，SOT-753 | SOT-23-5 | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，4A | ||
|
|
|
Texas Instruments |
9,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SOT23
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
|
|
|
Texas Instruments |
13,628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SOT23
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
|
|
|
Texas Instruments |
13,628
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW SIDE 1CH 6SOT23
|
- | 4.5 V ~ 18 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Inverting，Non-Inverting | Low-Side | IGBT，N-Channel MOSFET | - | 8ns，7ns | 1V，2.4V | 4A，8A | ||
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|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | High-Side | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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|
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ON Semiconductor |
4,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | High-Side | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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|
|
ON Semiconductor |
4,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | High-Side | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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|
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Texas Instruments |
3,500
|
3 jours |
-
|
MOQ: 3500 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
|
Tape & Reel (TR) | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | High-Side | N-Channel MOSFET | - | - | 0.8V，2V | 24μA，2.2mA | ||
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|
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Texas Instruments |
7,778
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
|
Cut Tape (CT) | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | High-Side | N-Channel MOSFET | - | - | 0.8V，2V | 24μA，2.2mA | ||
|
|
|
Texas Instruments |
7,778
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
|
- | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | High-Side | N-Channel MOSFET | - | - | 0.8V，2V | 24μA，2.2mA | ||
|
|
|
Texas Instruments |
19,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
|
Tape & Reel (TR) | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | High-Side | N-Channel MOSFET | - | - | 0.8V，2V | 24μA，2.2mA | ||
|
|
|
Texas Instruments |
21,741
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
|
Cut Tape (CT) | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | High-Side | N-Channel MOSFET | - | - | 0.8V，2V | 24μA，2.2mA | ||
|
|
|
Texas Instruments |
21,741
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC CTRL HIGH SIDE AUTO 10MSOP
|
- | 5.5 V ~ 65 V | -40°C ~ 125°C | 10-TFSOP，10-MSOP (0.118"，3.00mm Width) | 10-VSSOP | Non-Inverting | High-Side | N-Channel MOSFET | - | - | 0.8V，2V | 24μA，2.2mA | ||
|
|
|
ON Semiconductor |
1,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tube | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | High-Side | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
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|
|
Texas Instruments |
3,000
|
3 jours |
-
|
MOQ: 3000 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Tape & Reel (TR) | 10 V ~ 32 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Texas Instruments |
4,192
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
Cut Tape (CT) | 10 V ~ 32 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
Texas Instruments |
4,192
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRVR IGBT/MOSFET SOT23-6
|
- | 10 V ~ 32 V | -40°C ~ 150°C (TJ) | SOT-23-6 | SOT-23-6 | Non-Inverting | High-Side or Low-Side | IGBT，N-Channel MOSFET | - | 15ns，7ns | 1.2V，2.2V | 2.5A，5A | ||
|
|
|
ON Semiconductor |
5,844
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI SIDE 8-SOIC
|
Tube | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting | High-Side | IGBT，N-Channel MOSFET | 300V | 65ns，25ns | - | 450mA，450mA |
