- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Channel Type：
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- Driven Configuration：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Conditions sélectionnées:
Découvrez les produits 54
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Channel Type | Driven Configuration | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | |
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Texas Instruments |
12,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Tape & Reel (TR) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | ||
|
|
|
Texas Instruments |
16,709
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Cut Tape (CT) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | ||
|
|
|
Texas Instruments |
16,709
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC HI/LO-SIDE DVR 3A 120V 8SOPWR
|
Tape & Reel (TR) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 8ns，7ns | 3V，8V | ||
|
|
|
Texas Instruments |
2,997
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HI/LO-SIDE DVR 3A 120V 8SOPWR
|
Cut Tape (CT) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 8ns，7ns | 3V，8V | ||
|
|
|
Texas Instruments |
2,997
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC HI/LO-SIDE DVR 3A 120V 8SOPWR
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 8-PowerSOIC (0.154"，3.90mm Width) | 8-SO PowerPad | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 8ns，7ns | 3V，8V | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Tape & Reel (TR) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-VDFN Exposed Pad | 10-VSON (4x4) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | ||
|
|
|
Texas Instruments |
1,716
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
Cut Tape (CT) | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-VDFN Exposed Pad | 10-VSON (4x4) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | ||
|
|
|
Texas Instruments |
1,716
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HIGH/LOW SIDE 3A 8SOPWR
|
- | 8 V ~ 17 V | -40°C ~ 140°C (TJ) | 10-VDFN Exposed Pad | 10-VSON (4x4) | Non-Inverting | Independent | Half-Bridge | N-Channel MOSFET | 120V | 8ns，7ns | 0.8V，2.5V | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR DUAL 2A 8-SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | - | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | - | ||
|
|
|
ON Semiconductor |
52
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 2A 8-SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVER DUAL 2A 8-SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Low-Side | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | ||
|
|
|
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC BRIDGE DVR P/N-CH 2A 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Inverting，Non-Inverting | Independent | Half-Bridge | N-Channel，P-Channel MOSFET | - | 12ns，9ns | 0.8V，2V |
