- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 17
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
Tape & Reel (TR) | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | - | N-Channel MOSFET | - | 35ns，35ns | 0.8V，2V | - | ||
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|
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STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
Cut Tape (CT) | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | - | N-Channel MOSFET | - | 35ns，35ns | 0.8V，2V | - | ||
|
|
|
STMicroelectronics |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
- | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | - | N-Channel MOSFET | - | 35ns，35ns | 0.8V，2V | - | ||
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|
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Melexis Technologies NV |
80
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
AUTOMOTIVE 3 PHASE DC PRE DRIVER
|
Bulk | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 32-VFQFN Exposed Pad | 32-QFN (5x5) | - | N-Channel MOSFET | - | 7ns，7ns | 0.8V，1.5V | 1.4A，1.6A | ||
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STMicroelectronics |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC FET DVR 3PHASE BLDC 64TQFP
|
Tray | 5 V ~ 54 V | -40°C ~ 150°C (TJ) | 64-TQFP Exposed Pad | 64-TQFP-EP (10x10) | - | N-Channel MOSFET | - | 35ns，35ns | 0.8V，2V | - | ||
|
|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVE AUTOMOTIVE 28SOIC
|
Tape & Reel (TR) | 24 V ~ 150 V | -40°C ~ 125°C (TA) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | N-Channel MOSFET | 200V | 100ns，35ns | 0.7V，2.5V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DRIVE AUTOMOTIVE 28SOIC
|
Cut Tape (CT) | 24 V ~ 150 V | -40°C ~ 125°C (TA) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | N-Channel MOSFET | 200V | 100ns，35ns | 0.7V，2.5V | 200mA，350mA | ||
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Infineon Technologies |
Enquête
|
- |
-
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MOQ: 1 MPQ: 1
|
IC GATE DRIVE AUTOMOTIVE 28SOIC
|
- | 24 V ~ 150 V | -40°C ~ 125°C (TA) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | N-Channel MOSFET | 200V | 100ns，35ns | 0.7V，2.5V | 200mA，350mA | ||
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Melexis Technologies NV |
Enquête
|
- |
-
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MOQ: 5000 MPQ: 1
|
AUTOMOTIVE 3 PHASE DC PRE DRIVER
|
Tape & Reel (TR) | 4.5 V ~ 28 V | -40°C ~ 150°C (TJ) | 32-VFQFN Exposed Pad | 32-QFN (5x5) | - | N-Channel MOSFET | - | 7ns，7ns | 0.8V，1.5V | 1.4A，1.6A | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 100 MPQ: 1
|
IC GATE DRIVER HV 3PHASE 28SOIC
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 252 MPQ: 1
|
IC DRVR IGBT/MOSFET 20SOIC
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 20-SOIC (0.295"，7.50mm Width) | 20-SOIC | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 600V | 125ns，50ns | 0.8V，2.5V | 200mA，350mA | ||
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|
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Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 125 MPQ: 1
|
IC GATE DRIVE AUTOMOTIVE 28SOIC
|
Tube | 24 V ~ 150 V | -40°C ~ 125°C (TJ) | 28-SOIC (0.295"，7.50mm Width) | 28-SOIC | Non-Inverting | N-Channel MOSFET | 200V | 100ns，35ns | 0.7V，2.5V | 200mA，350mA | ||
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|
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Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 48HTQFP
|
Tape & Reel (TR) | 4.4 V ~ 45 V | -40°C ~ 150°C (TJ) | 48-TQFP Exposed Pad | 48-HTQFP (7x7) | Non-Inverting | N-Channel MOSFET | - | - | 0.8V，2V | 1A，1A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 48HTQFP
|
Tape & Reel (TR) | 4.4 V ~ 45 V | -40°C ~ 175°C (TJ) | 48-TQFP Exposed Pad | 48-HTQFP (7x7) | Non-Inverting | N-Channel MOSFET | - | - | 0.8V，2V | 1A，1A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC GATE DRVR HALF-BRIDGE 48HTQFP
|
Tape & Reel (TR) | 4.4 V ~ 45 V | -40°C ~ 150°C (TJ) | 48-TQFP Exposed Pad | 48-HTQFP (7x7) | Non-Inverting | N-Channel MOSFET | - | - | 0.8V，2V | 1A，1A | ||
|
|
|
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 81 MPQ: 1
|
IC DRVR BRIDGE 3-PHASE 44PLCC
|
Tube | 10 V ~ 20 V | -40°C ~ 150°C (TJ) | 44-LCC (J-Lead)，32 Leads | 44-PLCC，32 Leads (16.58x16.58) | Non-Inverting | IGBT，N-Channel，P-Channel MOSFET | 600V | 80ns，40ns | 0.8V，2.2V | 250mA，500mA |
