Découvrez les produits 8
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Package / Case Supplier Device Package Gate Type Rise / Fall Time (Typ) Logic Voltage - VIL, VIH
UCC27511AQDBVRQ1
Texas Instruments
9,000
3 jours
-
MOQ: 3000  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6SOT23
Tape & Reel (TR) 4.5 V ~ 18 V SOT-23-6 SOT-23-6 IGBT,N-Channel MOSFET 8ns,7ns 1V,2.4V
UCC27511AQDBVRQ1
Texas Instruments
13,628
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6SOT23
Cut Tape (CT) 4.5 V ~ 18 V SOT-23-6 SOT-23-6 IGBT,N-Channel MOSFET 8ns,7ns 1V,2.4V
UCC27511AQDBVRQ1
Texas Instruments
13,628
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DVR LOW SIDE 1CH 6SOT23
- 4.5 V ~ 18 V SOT-23-6 SOT-23-6 IGBT,N-Channel MOSFET 8ns,7ns 1V,2.4V
MAX15024AATB+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC GATE DRVR 1CH 16NS 10TDFN
Tape & Reel (TR) 4.5 V ~ 28 V 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) N-Channel MOSFET 22ns,16ns 0.8V,2V
MAX15024AATB+T
Maxim Integrated
2,143
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 1CH 16NS 10TDFN
Cut Tape (CT) 4.5 V ~ 28 V 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) N-Channel MOSFET 22ns,16ns 0.8V,2V
MAX15024AATB+T
Maxim Integrated
2,143
3 jours
-
MOQ: 1  MPQ: 1
IC GATE DRVR 1CH 16NS 10TDFN
- 4.5 V ~ 28 V 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) N-Channel MOSFET 22ns,16ns 0.8V,2V
MAX15024AATB/V+T
Maxim Integrated
Enquête
-
-
MOQ: 2500  MPQ: 1
IC MOSFET DRIVER 8A SGL 10TDFN
Tape & Reel (TR) 4.5 V ~ 28 V 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) N-Channel MOSFET 22ns,16ns 0.8V,2V
MAX15024BATB+T
Maxim Integrated
Enquête
-
-
MOQ: 0  MPQ: 1
IC GATE DRVR 1CH 16NS 10TDFN
Tape & Reel (TR) 6.5 V ~ 28 V 10-WFDFN Exposed Pad 10-TDFN-EP (3x3) N-Channel MOSFET 24ns,16ns 2V,4.25V