- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Mounting Type:
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- Input Type:
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- Channel Type:
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- Driven Configuration:
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- Gate Type:
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- High Side Voltage - Max (Bootstrap):
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- Rise / Fall Time (Typ):
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- Logic Voltage - VIL, VIH:
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- Conditions sélectionnées:
Découvrez les produits 47
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | ||
ON Semiconductor |
1,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
10 V ~ 20 V | -55°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 0.8V,2.5V | 4A,4A | ||||
ON Semiconductor |
5,844
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI SIDE 8-SOIC
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 300V | 65ns,25ns | - | 450mA,450mA | ||||
Renesas Electronics America Inc. |
965
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
|
8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173",4.40mm Width) Exposed Pad | 14-HTSSOP | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns,10ns | 1.8V,4V | 2A,2A | ||||
Texas Instruments |
963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER
|
10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | - | Synchronous | High-Side or Low-Side | 2 | IGBT,N-Channel,P-Channel MOSFET | 700V | 16ns,10ns | 0.8V,2.4V | 1.8A,2.8A | ||||
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
AUTOMOTIVE 4-A,6-A,3.0-KV(RMS)
|
3 V ~ 5.5 V | -40°C ~ 150°C (TA) | 16-SOIC (0.154",3.90mm Width) | 16-SOIC | Surface Mount | CMOS/TTL | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | - | 5ns,6ns | 1.25V,1.6V | 4A,6A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 9500 MPQ: 1
|
IC GATE DVR HI SIDE RESET 8-SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 200ns,25ns | - | 200mA,400mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 9500 MPQ: 1
|
IC GATE DRIVER HI SIDE 8-SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 15ns,10ns | - | 250mA,500mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRVR HALF-BRDG SELF-OSC 8SOIC
|
10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | RC Input Circuit | Independent | Half-Bridge | 2 | N-Channel MOSFET | 100V | 40ns,20ns | - | 1A,1A | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 9500 MPQ: 1
|
IC GATE DRIVER HALF BRIDGE 8SOIC
|
5.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 40ns,25ns | 0.8V,2.7V | 300mA,600mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 9500 MPQ: 1
|
IC GATE DRIVER HI SIDE 8-SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 15ns,10ns | - | 250mA,500mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 9500 MPQ: 1
|
IC GATE DRIVER HI SIDE 8-SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 200ns,25ns | - | 200mA,400mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 9500 MPQ: 1
|
IC GATE DRIVER HI SIDE 8-SOIC
|
4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 300V | 65ns,25ns | - | 450mA,450mA | ||||
ON Semiconductor |
Enquête
|
- |
-
|
MOQ: 4750 MPQ: 1
|
IC GATE DVR HI/LOW SIDE 8-SOIC
|
10 V ~ 22 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOP | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,20ns | 1.2V,2.5V | 4.5A,4.5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SO | Surface Mount | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 100V | 40ns,20ns | - | 1A,1A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 380 MPQ: 1
|
IC DRVIER HALF-BRIDGE 8SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Inverting,Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 200V | 70ns,35ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 285 MPQ: 1
|
IC DRVIER HALF-BRIDGE 8SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Synchronous | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 200V | 160ns,70ns | 0.8V,2.5V | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 180 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 500V | 25ns,15ns | 6V,9.5V | 2.5A,2.5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 405 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 60ns,30ns | 6V,9.5V | 290mA,600mA | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 180 MPQ: 1
|
IC DRIVER HIGH/LOW SIDE 16SOIC
|
3 V ~ 20 V | -40°C ~ 150°C (TJ) | 16-SOIC (0.295",7.50mm Width) | 16-SOIC | Surface Mount | Non-Inverting | Independent | Half-Bridge | 2 | IGBT,N-Channel MOSFET | 600V | 25ns,15ns | 6V,9.5V | 2.5A,2.5A | ||||
Infineon Technologies |
Enquête
|
- |
-
|
MOQ: 380 MPQ: 1
|
IC DRIVER HIGH SIDE SGL 8SOIC
|
10 V ~ 20 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154",3.90mm Width) | 8-SOIC | Surface Mount | Non-Inverting | Single | High-Side | 1 | IGBT,N-Channel MOSFET | 600V | 75ns,25ns | 6V,9.5V | 290mA,600mA |