- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Input Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 61
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Input Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
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Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Tape & Reel (TR) | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Half-Bridge | 2 | N-Channel MOSFET | 100V | 40ns，20ns | - | 1A，1A | ||
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|
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Infineon Technologies |
4,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Cut Tape (CT) | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Half-Bridge | 2 | N-Channel MOSFET | 100V | 40ns，20ns | - | 1A，1A | ||
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|
|
Infineon Technologies |
4,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
- | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | RC Input Circuit | Half-Bridge | 2 | N-Channel MOSFET | 100V | 40ns，20ns | - | 1A，1A | ||
|
|
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Renesas Electronics America Inc. |
250
|
3 jours |
-
|
MOQ: 250 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
|
Tape & Reel (TR) | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
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|
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Renesas Electronics America Inc. |
379
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
|
Cut Tape (CT) | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
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|
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Renesas Electronics America Inc. |
379
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
|
- | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
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|
|
Renesas Electronics America Inc. |
965
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRVR HALF BRIDGE 10DFN
|
Tube | 8 V ~ 14 V | -55°C ~ 150°C (TJ) | 14-TSSOP (0.173"，4.40mm Width) Exposed Pad | 14-HTSSOP | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 114V | 10ns，10ns | 1.8V，4V | 2A，2A | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SOIC
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Tape & Reel (TR) | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | 0.8V，2.1V | 2A，2A | ||
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|
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Texas Instruments |
4,946
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | 0.8V，2.1V | 2A，2A | ||
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|
|
Texas Instruments |
4,946
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SOIC
|
- | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | 0.8V，2.1V | 2A，2A | ||
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Texas Instruments |
Enquête
|
- |
-
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MOQ: 3000 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SON
|
Tape & Reel (TR) | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | - | 2A，2A | ||
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|
|
Texas Instruments |
3,252
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SON
|
Cut Tape (CT) | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | - | 2A，2A | ||
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|
|
Texas Instruments |
3,252
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SON
|
- | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | 8-VDFN Exposed Pad | 8-SON (3x3) | Non-Inverting | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | - | 2A，2A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC MOSFET DVR DUAL HS 8TSSOP
|
Tape & Reel (TR) | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
4,688
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 8TSSOP
|
Cut Tape (CT) | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
|
|
|
Texas Instruments |
4,688
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 8TSSOP
|
- | 4 V ~ 14 V | -40°C ~ 125°C (TA) | 8-TSSOP (0.173"，4.40mm Width) | 8-TSSOP | Inverting | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 14ns，15ns | 1V，4V | 2A，2A | ||
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|
|
Texas Instruments |
Enquête
|
- |
-
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MOQ: 2500 MPQ: 1
|
UCC27712QDRQ1
|
Tape & Reel (TR) | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | - | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
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|
|
Texas Instruments |
2,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
UCC27712QDRQ1
|
Cut Tape (CT) | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | - | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
2,201
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
UCC27712QDRQ1
|
- | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | - | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A | ||
|
|
|
Texas Instruments |
963
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
700V GATE DRIVER
|
Tube | 10 V ~ 20 V | -40°C ~ 125°C (TA) | 8-SOIC (0.154"，3.90mm Width) | 8-SOIC | - | High-Side or Low-Side | 2 | IGBT，N-Channel，P-Channel MOSFET | 700V | 16ns，10ns | 0.8V，2.4V | 1.8A，2.8A |
