Découvrez les produits 9
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Package / Case Supplier Device Package Input Type Channel Type Driven Configuration Number of Drivers Gate Type Logic Voltage - VIL, VIH Current - Peak Output (Source, Sink)
AUIRS21271STR
Infineon Technologies
Enquête
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MOQ: 2500  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
Tape & Reel (TR) 9 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 0.8V,2.5V 290mA,600mA
AUIRS21271STR
Infineon Technologies
2,474
3 jours
-
MOQ: 1  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
Cut Tape (CT) 9 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 0.8V,2.5V 290mA,600mA
AUIRS21271STR
Infineon Technologies
2,474
3 jours
-
MOQ: 1  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
- 9 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 0.8V,2.5V 290mA,600mA
AUIRS2127STR
Infineon Technologies
Enquête
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MOQ: 2500  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
Tape & Reel (TR) 12 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 0.8V,2.5V 290mA,600mA
AUIRS21271S
Infineon Technologies
Enquête
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MOQ: 285  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
Tube 9 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 0.8V,2.5V 290mA,600mA
AUIRS2127S
Infineon Technologies
Enquête
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MOQ: 285  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
Tube 12 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Non-Inverting Single High-Side 1 IGBT,N-Channel MOSFET 0.8V,2.5V 290mA,600mA
AUIRS21281S
Infineon Technologies
Enquête
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MOQ: 285  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
Tube 9 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Single High-Side 1 IGBT,N-Channel MOSFET 0.8V,2.5V 290mA,600mA
AUIRS2128S
Infineon Technologies
Enquête
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MOQ: 285  MPQ: 1
IC DVR CURRENT SENSE 1CH 8SOIC
Tube 12 V ~ 20 V 8-SOIC (0.154",3.90mm Width) 8-SOIC Inverting Single High-Side 1 IGBT,N-Channel MOSFET 0.8V,2.5V 290mA,600mA
AUIRS2332J
Infineon Technologies
Enquête
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MOQ: 81  MPQ: 1
IC DRVR BRIDGE 3-PHASE 44PLCC
Tube 10 V ~ 20 V 44-LCC (J-Lead),32 Leads 44-PLCC,32 Leads (16.58x16.58) Non-Inverting 3-Phase Half-Bridge 6 IGBT,N-Channel,P-Channel MOSFET 0.8V,2.2V 250mA,500mA