- Voltage - Supply：
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- Operating Temperature：
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- Input Type：
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- Channel Type：
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- Driven Configuration：
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- Gate Type：
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- High Side Voltage - Max (Bootstrap)：
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- Rise / Fall Time (Typ)：
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- Logic Voltage - VIL, VIH：
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- Current - Peak Output (Source, Sink)：
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- Conditions sélectionnées:
Découvrez les produits 193
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Input Type | Channel Type | Driven Configuration | Number of Drivers | Gate Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | |
|
|
|
ON Semiconductor |
5,000
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 5A，5A | ||
|
|
|
ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 5A，5A | ||
|
|
|
ON Semiconductor |
7,040
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR LOSIDE DUAL 4A 8SOIC
|
- | 4.5 V ~ 18 V | -40°C ~ 125°C (TA) | Non-Inverting | Independent | Low-Side | 2 | N-Channel MOSFET | - | 12ns，9ns | 0.8V，2V | 5A，5A | ||
|
|
|
ON Semiconductor |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tape & Reel (TR) | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
4,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Cut Tape (CT) | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
ON Semiconductor |
4,990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
- | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
Infineon Technologies |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Tape & Reel (TR) | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 100V | 40ns，20ns | - | 1A，1A | ||
|
|
|
Infineon Technologies |
4,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
Cut Tape (CT) | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 100V | 40ns，20ns | - | 1A，1A | ||
|
|
|
Infineon Technologies |
4,410
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DVR HALF-BRDG SELF OSC 8SOIC
|
- | 10 V ~ 15 V | -40°C ~ 150°C (TJ) | RC Input Circuit | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 100V | 40ns，20ns | - | 1A，1A | ||
|
|
|
ON Semiconductor |
1,469
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HIGH SIDE 8-SOIC
|
Tube | 10 V ~ 20 V | -55°C ~ 150°C (TJ) | Non-Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 600V | 25ns，15ns | 0.8V，2.5V | 4A，4A | ||
|
|
|
Texas Instruments |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
Tape & Reel (TR) | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
|
Texas Instruments |
7,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
Cut Tape (CT) | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
|
Texas Instruments |
7,624
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
- | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Non-Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A | ||
|
|
|
ON Semiconductor |
5,844
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC GATE DVR HI SIDE 8-SOIC
|
Tube | 4.5 V ~ 20 V | -40°C ~ 150°C (TJ) | Inverting | Single | High-Side | 1 | IGBT，N-Channel MOSFET | 300V | 65ns，25ns | - | 450mA，450mA | ||
|
|
|
ON Semiconductor |
6,670
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGNITION MODULE DRIVER 8SOIC
|
Cut Tape (CT) | 4 V ~ 28 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT | - | - | 1.2V，2V | - | ||
|
|
|
ON Semiconductor |
6,670
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC IGNITION MODULE DRIVER 8SOIC
|
- | 4 V ~ 28 V | -40°C ~ 150°C (TJ) | Non-Inverting | Single | Low-Side | 1 | IGBT | - | - | 1.2V，2V | - | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SOIC
|
Tape & Reel (TR) | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | 0.8V，2.1V | 2A，2A | ||
|
|
|
Texas Instruments |
4,946
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SOIC
|
Cut Tape (CT) | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | 0.8V，2.1V | 2A，2A | ||
|
|
|
Texas Instruments |
4,946
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC MOSFET DVR SINK SYNC 4A 8SOIC
|
- | 4.5 V ~ 8.8 V | -40°C ~ 125°C (TJ) | Non-Inverting | Synchronous | Half-Bridge | 2 | N-Channel MOSFET | 33V | 10ns，10ns | 0.8V，2.1V | 2A，2A | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC MOSFET DVR DUAL HS 4A 8-SOIC
|
Tape & Reel (TR) | 4 V ~ 15 V | -55°C ~ 150°C (TJ) | Inverting | Independent | Low-Side | 2 | N-Channel，P-Channel MOSFET | - | 20ns，15ns | 1V，2V | 4A，4A |
